All MOSFET. STU816S Datasheet

 

STU816S Datasheet and Replacement


   Type Designator: STU816S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Qg ⓘ - Total Gate Charge: 12.5 nC
   Cossⓘ - Output Capacitance: 108 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.046 Ohm
   Package: TO252 DPAK
 

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STU816S Datasheet (PDF)

 ..1. Size:108K  samhop
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STU816S

GrerrPPrPrProSTU/D816SaS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m ) MaxRugged and reliable.46 @ VGS=10VTO-252 and TO-251 Package.80V 20A68 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I

Datasheet: FCB20N60F , FCB36N60N , 2SJ279 , FCD4N60 , IRFD9020 , FCD5N60 , STU9916L , FCD7N60 , 2SK3878 , FCD9N60NTM , STU802S , FCH22N60N , STU670S , FCH25N60N , STU668S , FCH35N60 , STU666S .

History: MTN2510LJ3 | IXTH102N15T | IXTF280N055T

Keywords - STU816S MOSFET datasheet

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