All MOSFET. VS8205BH Datasheet

 

VS8205BH Datasheet and Replacement


   Type Designator: VS8205BH
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 16 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.041 Ohm
   Package: SOT23-6L
 

 VS8205BH substitution

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VS8205BH Datasheet (PDF)

 ..1. Size:781K  cn vanguard
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VS8205BH

VS8205BH 16V/5.5A N-Channel Advanced Power MOSFET Features V DS 16 V R DS(on),TYP@ VGS=4.5 V 28 m Enhancement mode R DS(on),TYP@ VGS=2.5 V 37 m Low on-resistance RDS(on) @ VGS=2.5 V I D 5.5 A Fast Switching and High efficiency Pb-free lead plating; RoHS compliant SOT23-6L Tape and reel Part ID Package Type Marking information VS8205BH SOT23-

Datasheet: VS6614GS , VS6640AC , VS6808DH , VS6880AT , VS7N65AD , VS7N65AF , VS8068AD , VS80N08AT , IRF9540N , VSB012N03MS , VSD004N03MS , VSD007N06MS , VSD013N10MS , VSD050P10MS , VSD090N10MS , VSE009NE6MS-G , VSE090N10MS .

History: SI4622DY | VBZL80N03

Keywords - VS8205BH MOSFET datasheet

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