All MOSFET. VSB012N03MS Datasheet

 

VSB012N03MS Datasheet and Replacement


   Type Designator: VSB012N03MS
   Marking Code: 012N03M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id| ⓘ - Maximum Drain Current: 38 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 18 nC
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TDFN3.3X3.3
 

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VSB012N03MS Datasheet (PDF)

 ..1. Size:529K  cn vanguard
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VSB012N03MS

VSB012N03MS 30V/38A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 9 m N-Channel R DS(on),TYP@ VGS=4.5V 12 m Enhancement mode I D 38 A Very low on-resistance RDS(on) @ VGS=4.5 V TDFN3.3x3.3 Fast Switching 100% Avalanche Tested Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: WFD1N60

Keywords - VSB012N03MS MOSFET datasheet

 VSB012N03MS cross reference
 VSB012N03MS equivalent finder
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