VSB012N03MS PDF and Equivalents Search

 

VSB012N03MS Specs and Replacement

Type Designator: VSB012N03MS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 38 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TDFN3.3X3.3

VSB012N03MS substitution

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VSB012N03MS datasheet

 ..1. Size:529K  cn vanguard
 vsb012n03ms.pdf pdf_icon

VSB012N03MS

VSB012N03MS 30V/38A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 9 m N-Channel R DS(on),TYP@ VGS=4.5V 12 m Enhancement mode I D 38 A Very low on-resistance RDS(on) @ VGS=4.5 V TDFN3.3x3.3 Fast Switching 100% Avalanche Tested Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking ... See More ⇒

Detailed specifications: VS6640AC, VS6808DH, VS6880AT, VS7N65AD, VS7N65AF, VS8068AD, VS80N08AT, VS8205BH, K4145, VSD004N03MS, VSD007N06MS, VSD013N10MS, VSD050P10MS, VSD090N10MS, VSE009NE6MS-G, VSE090N10MS, VSF013N10MS

Keywords - VSB012N03MS MOSFET specs

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