All MOSFET. VSB012N03MS Datasheet

 

VSB012N03MS Datasheet and Replacement


   Type Designator: VSB012N03MS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 41 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 38 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TDFN3.3X3.3
 

 VSB012N03MS substitution

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VSB012N03MS Datasheet (PDF)

 ..1. Size:529K  cn vanguard
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VSB012N03MS

VSB012N03MS 30V/38A N-Channel Advanced Power MOSFET V DS 30 V Features R DS(on),TYP@ VGS=10 V 9 m N-Channel R DS(on),TYP@ VGS=4.5V 12 m Enhancement mode I D 38 A Very low on-resistance RDS(on) @ VGS=4.5 V TDFN3.3x3.3 Fast Switching 100% Avalanche Tested Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking

Datasheet: VS6640AC , VS6808DH , VS6880AT , VS7N65AD , VS7N65AF , VS8068AD , VS80N08AT , VS8205BH , IRFB3607 , VSD004N03MS , VSD007N06MS , VSD013N10MS , VSD050P10MS , VSD090N10MS , VSE009NE6MS-G , VSE090N10MS , VSF013N10MS .

History: L2N60F

Keywords - VSB012N03MS MOSFET datasheet

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