All MOSFET. VSD090N10MS Datasheet

 

VSD090N10MS Datasheet and Replacement


   Type Designator: VSD090N10MS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 41 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO252
 

 VSD090N10MS substitution

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VSD090N10MS Datasheet (PDF)

 ..1. Size:725K  cn vanguard
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VSD090N10MS

VSD090N10MS 100V/15A N-Channel Advanced Power MOSFET V DS 100 V Features R DS(on),typ@VGS=10V 78 m N-Channel5V Logic Level Control R DS(on),typ@VGS=4.5V 82 m Enhancement mode I D 15 A Very low on-resistance @ VGS=4.5 V Fast Switching TO-252 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type

Datasheet: VS8068AD , VS80N08AT , VS8205BH , VSB012N03MS , VSD004N03MS , VSD007N06MS , VSD013N10MS , VSD050P10MS , IRF1010E , VSE009NE6MS-G , VSE090N10MS , VSF013N10MS , VSF600N70HS , VSI008N10MS , VSI013N08MS , VSI080N06MS , VSO008N10MS .

History: TMP7N65Z | SVSP60R090FJDHD4 | FC591601 | B1M160120HC | 2SK3111 | 2SK3111-S | IRFS624B

Keywords - VSD090N10MS MOSFET datasheet

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