VSD090N10MS PDF and Equivalents Search

 

VSD090N10MS Specs and Replacement

Type Designator: VSD090N10MS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.5 nS

Cossⓘ - Output Capacitance: 41 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm

Package: TO252

VSD090N10MS substitution

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VSD090N10MS datasheet

 ..1. Size:725K  cn vanguard
vsd090n10ms.pdf pdf_icon

VSD090N10MS

VSD090N10MS 100V/15A N-Channel Advanced Power MOSFET V DS 100 V Features R DS(on),typ@VGS=10V 78 m N-Channel 5V Logic Level Control R DS(on),typ@VGS=4.5V 82 m Enhancement mode I D 15 A Very low on-resistance @ VGS=4.5 V Fast Switching TO-252 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type ... See More ⇒

Detailed specifications: VS8068AD, VS80N08AT, VS8205BH, VSB012N03MS, VSD004N03MS, VSD007N06MS, VSD013N10MS, VSD050P10MS, IRF1010E, VSE009NE6MS-G, VSE090N10MS, VSF013N10MS, VSF600N70HS, VSI008N10MS, VSI013N08MS, VSI080N06MS, VSO008N10MS

Keywords - VSD090N10MS MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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