All MOSFET. VSD090N10MS Datasheet

 

VSD090N10MS Datasheet and Replacement


   Type Designator: VSD090N10MS
   Marking Code: 090N10M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 15.6 nC
   tr ⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 41 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO252
 

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VSD090N10MS Datasheet (PDF)

 ..1. Size:725K  cn vanguard
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VSD090N10MS

VSD090N10MS 100V/15A N-Channel Advanced Power MOSFET V DS 100 V Features R DS(on),typ@VGS=10V 78 m N-Channel5V Logic Level Control R DS(on),typ@VGS=4.5V 82 m Enhancement mode I D 15 A Very low on-resistance @ VGS=4.5 V Fast Switching TO-252 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: VSP002N03MS-G | VS4603GPHT

Keywords - VSD090N10MS MOSFET datasheet

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