VSD090N10MS Specs and Replacement
Type Designator: VSD090N10MS
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 4.5 nS
Cossⓘ - Output Capacitance: 41 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
Package: TO252
VSD090N10MS substitution
- MOSFET ⓘ Cross-Reference Search
VSD090N10MS datasheet
vsd090n10ms.pdf
VSD090N10MS 100V/15A N-Channel Advanced Power MOSFET V DS 100 V Features R DS(on),typ@VGS=10V 78 m N-Channel 5V Logic Level Control R DS(on),typ@VGS=4.5V 82 m Enhancement mode I D 15 A Very low on-resistance @ VGS=4.5 V Fast Switching TO-252 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type ... See More ⇒
Detailed specifications: VS8068AD, VS80N08AT, VS8205BH, VSB012N03MS, VSD004N03MS, VSD007N06MS, VSD013N10MS, VSD050P10MS, IRF1010E, VSE009NE6MS-G, VSE090N10MS, VSF013N10MS, VSF600N70HS, VSI008N10MS, VSI013N08MS, VSI080N06MS, VSO008N10MS
Keywords - VSD090N10MS MOSFET specs
VSD090N10MS cross reference
VSD090N10MS equivalent finder
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VSD090N10MS substitution
VSD090N10MS replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: R6011KNX | SE9926 | SW4N60 | NTD60N03-001 | STFI11NM65N | AP60U03GH
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