All MOSFET. VSD090N10MS Datasheet

 

VSD090N10MS MOSFET. Datasheet pdf. Equivalent


   Type Designator: VSD090N10MS
   Marking Code: 090N10M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 15.6 nC
   trⓘ - Rise Time: 4.5 nS
   Cossⓘ - Output Capacitance: 41 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.09 Ohm
   Package: TO252

 VSD090N10MS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VSD090N10MS Datasheet (PDF)

 ..1. Size:725K  cn vanguard
 vsd090n10ms.pdf

VSD090N10MS VSD090N10MS

VSD090N10MS 100V/15A N-Channel Advanced Power MOSFET V DS 100 V Features R DS(on),typ@VGS=10V 78 m N-Channel5V Logic Level Control R DS(on),typ@VGS=4.5V 82 m Enhancement mode I D 15 A Very low on-resistance @ VGS=4.5 V Fast Switching TO-252 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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