All MOSFET. VSE090N10MS Datasheet

 

VSE090N10MS Datasheet and Replacement


   Type Designator: VSE090N10MS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.094 Ohm
   Package: PDFN3333
 

 VSE090N10MS substitution

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VSE090N10MS Datasheet (PDF)

 ..1. Size:611K  cn vanguard
 vse090n10ms.pdf pdf_icon

VSE090N10MS

VSE090N10MS 100V/14A N-Channel Advanced Power MOSFET V DS 100 V Features R DS(on),TYP@ VGS=10V 78 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5V 83 m Enhancement mode I D 14 A Low on-resistance RDS(on) @ VGS=4.5 V PDFN3333 Fast Switching and High efficiency Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type

Datasheet: VS8205BH , VSB012N03MS , VSD004N03MS , VSD007N06MS , VSD013N10MS , VSD050P10MS , VSD090N10MS , VSE009NE6MS-G , IRLZ44N , VSF013N10MS , VSF600N70HS , VSI008N10MS , VSI013N08MS , VSI080N06MS , VSO008N10MS , VSO009N06MS-G , VSO009N06MS-GA .

Keywords - VSE090N10MS MOSFET datasheet

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