All MOSFET. VSE090N10MS Datasheet

 

VSE090N10MS MOSFET. Datasheet pdf. Equivalent


   Type Designator: VSE090N10MS
   Marking Code: 090N10M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 14 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11.8 nC
   trⓘ - Rise Time: 5.2 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.094 Ohm
   Package: PDFN3333

 VSE090N10MS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VSE090N10MS Datasheet (PDF)

 ..1. Size:611K  cn vanguard
 vse090n10ms.pdf

VSE090N10MS VSE090N10MS

VSE090N10MS 100V/14A N-Channel Advanced Power MOSFET V DS 100 V Features R DS(on),TYP@ VGS=10V 78 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5V 83 m Enhancement mode I D 14 A Low on-resistance RDS(on) @ VGS=4.5 V PDFN3333 Fast Switching and High efficiency Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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