VSE090N10MS PDF and Equivalents Search

 

VSE090N10MS Specs and Replacement

Type Designator: VSE090N10MS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 14 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.2 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.094 Ohm

Package: PDFN3333

VSE090N10MS substitution

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VSE090N10MS datasheet

 ..1. Size:611K  cn vanguard
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VSE090N10MS

VSE090N10MS 100V/14A N-Channel Advanced Power MOSFET V DS 100 V Features R DS(on),TYP@ VGS=10V 78 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5V 83 m Enhancement mode I D 14 A Low on-resistance RDS(on) @ VGS=4.5 V PDFN3333 Fast Switching and High efficiency Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type... See More ⇒

Detailed specifications: VS8205BH, VSB012N03MS, VSD004N03MS, VSD007N06MS, VSD013N10MS, VSD050P10MS, VSD090N10MS, VSE009NE6MS-G, AON6380, VSF013N10MS, VSF600N70HS, VSI008N10MS, VSI013N08MS, VSI080N06MS, VSO008N10MS, VSO009N06MS-G, VSO009N06MS-GA

Keywords - VSE090N10MS MOSFET specs

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