All MOSFET. FCD9N60NTM Datasheet

 

FCD9N60NTM MOSFET. Datasheet pdf. Equivalent

Type Designator: FCD9N60NTM

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 92.6 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 9 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 17.8 nC

Maximum Drain-Source On-State Resistance (Rds): 0.385 Ohm

Package: TO252, DPAK

FCD9N60NTM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCD9N60NTM Datasheet (PDF)

0.1. fcd9n60ntm.pdf Size:775K _fairchild_semi

FCD9N60NTM
FCD9N60NTM

February 2010 SupreMOSTM FCD9N60NTM N-Channel MOSFET 600V, 9A, 0.385mΩ Features Description • RDS(on) = 0.330Ω ( Typ.)@ VGS = 10V, ID = 4.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling • Ultra Low Gate Charge (Typ.Qg = 17.8nC) process that differentiates it from preceding multi-epi based tech- nologi

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