All MOSFET. FCD9N60NTM Datasheet

 

FCD9N60NTM Datasheet and Replacement


   Type Designator: FCD9N60NTM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 92.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 17.8 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.385 Ohm
   Package: TO252 DPAK
 

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FCD9N60NTM Datasheet (PDF)

 ..1. Size:775K  fairchild semi
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FCD9N60NTM

February 2010SupreMOSTMFCD9N60NTMN-Channel MOSFET 600V, 9A, 0.385mFeatures Description RDS(on) = 0.330 ( Typ.)@ VGS = 10V, ID = 4.5A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge (Typ.Qg = 17.8nC)process that differentiates it from preceding multi-epi based tech-nologi

Datasheet: FCB36N60N , 2SJ279 , FCD4N60 , IRFD9020 , FCD5N60 , STU9916L , FCD7N60 , STU816S , IRFP250N , STU802S , FCH22N60N , STU670S , FCH25N60N , STU668S , FCH35N60 , STU666S , FCH47N60 .

History: MMBF4392L

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