VSF013N10MS MOSFET. Datasheet pdf. Equivalent
Type Designator: VSF013N10MS
Marking Code: 013N10M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 47 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 43 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 82 nC
trⓘ - Rise Time: 46 nS
Cossⓘ - Output Capacitance: 255 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: TO220F
VSF013N10MS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VSF013N10MS Datasheet (PDF)
vsf013n10ms.pdf
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VSF013N10MS 100V/43A N-Channel Advanced Power MOSFET Features V DS 100 V R DS(on),TYP@ VGS=10 V 10 m Enhancement mode R DS(on),TYP@ VGS=4.5V 11 m Fast Switching I D 43 A Low on-resistance RDS(on) @ VGS=4.5 V TO-220F 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel information VSF013N10MS TO
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
![VSF013N10MS](https://alltransistors.com/images/us.png)
![VSF013N10MS](https://alltransistors.com/images/es.png)
![VSF013N10MS](https://alltransistors.com/images/ru.png)
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