VSF013N10MS MOSFET Datasheet: N-Ch, 100V, 43A. Full specification with pinout and replacement list

VSF013N10MS Specs and Replacement

Type Designator: VSF013N10MS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 47 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 43 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 255 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO220F

VSF013N10MS substitution

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VSF013N10MS datasheet

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VSF013N10MS 100V/43A N-Channel Advanced Power MOSFET Features V DS 100 V R DS(on),TYP@ VGS=10 V 10 m Enhancement mode R DS(on),TYP@ VGS=4.5V 11 m Fast Switching I D 43 A Low on-resistance RDS(on) @ VGS=4.5 V TO-220F 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel information VSF013N10MS TO... See More ⇒

Detailed specifications: VSB012N03MS, VSD004N03MS, VSD007N06MS, VSD013N10MS, VSD050P10MS, VSD090N10MS, VSE009NE6MS-G, VSE090N10MS, IRF530, VSF600N70HS, VSI008N10MS, VSI013N08MS, VSI080N06MS, VSO008N10MS, VSO009N06MS-G, VSO009N06MS-GA, VSO011N06MS