All MOSFET. VSF013N10MS Datasheet

 

VSF013N10MS Datasheet and Replacement


   Type Designator: VSF013N10MS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 43 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 255 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO220F
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VSF013N10MS Datasheet (PDF)

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VSF013N10MS

VSF013N10MS 100V/43A N-Channel Advanced Power MOSFET Features V DS 100 V R DS(on),TYP@ VGS=10 V 10 m Enhancement mode R DS(on),TYP@ VGS=4.5V 11 m Fast Switching I D 43 A Low on-resistance RDS(on) @ VGS=4.5 V TO-220F 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel information VSF013N10MS TO

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IPI50N12S3L-15 | SL2343 | BUK9Y15-100E | IPF060N03L | SUP90N03-03 | NCEP01T25T | AO4405E

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