All MOSFET. VSF013N10MS Datasheet

 

VSF013N10MS MOSFET. Datasheet pdf. Equivalent


   Type Designator: VSF013N10MS
   Marking Code: 013N10M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 47 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
   |Id|ⓘ - Maximum Drain Current: 43 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 82 nC
   trⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 255 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO220F

 VSF013N10MS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VSF013N10MS Datasheet (PDF)

 ..1. Size:757K  cn vanguard
 vsf013n10ms.pdf

VSF013N10MS VSF013N10MS

VSF013N10MS 100V/43A N-Channel Advanced Power MOSFET Features V DS 100 V R DS(on),TYP@ VGS=10 V 10 m Enhancement mode R DS(on),TYP@ VGS=4.5V 11 m Fast Switching I D 43 A Low on-resistance RDS(on) @ VGS=4.5 V TO-220F 100% Avalanche test Pb-free lead plating; RoHS compliant Part ID Package Type Marking Tape and reel information VSF013N10MS TO

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: RT3K66M | STP32N06L | STP85NF55L | 2N60G-TND-R | FHF2N60A

 

 
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