VSF600N70HS MOSFET. Datasheet pdf. Equivalent
Type Designator: VSF600N70HS
Marking Code: 600N70H
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.6 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 13 nC
trⓘ - Rise Time: 22 nS
Cossⓘ - Output Capacitance: 275 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO220F
VSF600N70HS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VSF600N70HS Datasheet (PDF)
vsf600n70hs.pdf
VSF600N70HS700V/8A N-Channel Advanced Power MOSFETV DS 700 VFeaturesR DS(on),TYP@ VGS=10V 520 m Extremely low gate chargeI D 8 A 100% avalanche testedTO-220F Super Junction Technology Pb-free lead plating; RoHS compliant; Halogen freePart ID Package Type Marking Tube InformationVSF600N70HS TO-220F 600N70H 50pcs/TubeMaximum ratings, at TA =25C, unless o
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