VSI008N10MS PDF and Equivalents Search

 

VSI008N10MS Specs and Replacement

Type Designator: VSI008N10MS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 107 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 94 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.2 nS

Cossⓘ - Output Capacitance: 1155 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm

Package: TO251

VSI008N10MS substitution

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VSI008N10MS datasheet

 ..1. Size:376K  cn vanguard
 vsi008n10ms.pdf pdf_icon

VSI008N10MS

VSI008N10MS 100V/94A N-Channel Advanced Power MOSFET V DS 100 V Features R DS(on),TYP@ VGS=10 V 6 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 7.8 m Enhancement mode I D 94 A Very low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology TO-251 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Par... See More ⇒

Detailed specifications: VSD007N06MS, VSD013N10MS, VSD050P10MS, VSD090N10MS, VSE009NE6MS-G, VSE090N10MS, VSF013N10MS, VSF600N70HS, NCEP15T14, VSI013N08MS, VSI080N06MS, VSO008N10MS, VSO009N06MS-G, VSO009N06MS-GA, VSO011N06MS, VSO012N06MS, VSO025C03MC

Keywords - VSI008N10MS MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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