VSI008N10MS MOSFET. Datasheet pdf. Equivalent
Type Designator: VSI008N10MS
Marking Code: 008N10M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 107 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id|ⓘ - Maximum Drain Current: 94 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 46 nC
trⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 1155 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
Package: TO251
VSI008N10MS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VSI008N10MS Datasheet (PDF)
..1. Size:376K cn vanguard
vsi008n10ms.pdf
vsi008n10ms.pdf
VSI008N10MS 100V/94A N-Channel Advanced Power MOSFET V DS 100 V Features R DS(on),TYP@ VGS=10 V 6 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 7.8 m Enhancement mode I D 94 A Very low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology TO-251 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Par
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
