All MOSFET. VSI008N10MS Datasheet

 

VSI008N10MS Datasheet and Replacement


   Type Designator: VSI008N10MS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 107 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 94 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 7.2 nS
   Cossⓘ - Output Capacitance: 1155 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: TO251
 

 VSI008N10MS substitution

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VSI008N10MS Datasheet (PDF)

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VSI008N10MS

VSI008N10MS 100V/94A N-Channel Advanced Power MOSFET V DS 100 V Features R DS(on),TYP@ VGS=10 V 6 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 7.8 m Enhancement mode I D 94 A Very low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology TO-251 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Par

Datasheet: VSD007N06MS , VSD013N10MS , VSD050P10MS , VSD090N10MS , VSE009NE6MS-G , VSE090N10MS , VSF013N10MS , VSF600N70HS , NCEP15T14 , VSI013N08MS , VSI080N06MS , VSO008N10MS , VSO009N06MS-G , VSO009N06MS-GA , VSO011N06MS , VSO012N06MS , VSO025C03MC .

History: LNH04R075 | WSF50N10G | SMF14N65 | HCF70R910 | LNH04R050 | ZXM64P03X | SWF13N70D

Keywords - VSI008N10MS MOSFET datasheet

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