All MOSFET. VSI013N08MS Datasheet

 

VSI013N08MS Datasheet and Replacement


   Type Designator: VSI013N08MS
   Marking Code: 013N08M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 66 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 80 nC
   tr ⓘ - Rise Time: 112 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO251
 

 VSI013N08MS substitution

   - MOSFET ⓘ Cross-Reference Search

 

VSI013N08MS Datasheet (PDF)

 ..1. Size:337K  cn vanguard
vsi013n08ms.pdf pdf_icon

VSI013N08MS

VSI013N08MS 80V/66A N-Channel Advanced Power MOSFET Features V DS 80 VR DS(on),TYP@ VGS=10 V 10 m N-Channel R DS(on),TYP@ VGS=4.5V 12 m Enhancement mode I D 66 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching TO-251 High conversion efficiency Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking info

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

Keywords - VSI013N08MS MOSFET datasheet

 VSI013N08MS cross reference
 VSI013N08MS equivalent finder
 VSI013N08MS lookup
 VSI013N08MS substitution
 VSI013N08MS replacement

 

 
Back to Top

 


 
.