VSI013N08MS MOSFET. Datasheet pdf. Equivalent
Type Designator: VSI013N08MS
Marking Code: 013N08M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 66 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 80 nC
trⓘ - Rise Time: 112 nS
Cossⓘ - Output Capacitance: 195 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: TO251
VSI013N08MS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VSI013N08MS Datasheet (PDF)
vsi013n08ms.pdf
VSI013N08MS 80V/66A N-Channel Advanced Power MOSFET Features V DS 80 VR DS(on),TYP@ VGS=10 V 10 m N-Channel R DS(on),TYP@ VGS=4.5V 12 m Enhancement mode I D 66 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching TO-251 High conversion efficiency Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking info
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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