VSI013N08MS PDF and Equivalents Search

 

VSI013N08MS Specs and Replacement

Type Designator: VSI013N08MS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 66 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 112 nS

Cossⓘ - Output Capacitance: 195 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: TO251

VSI013N08MS substitution

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VSI013N08MS datasheet

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 vsi013n08ms.pdf pdf_icon

VSI013N08MS

VSI013N08MS 80V/66A N-Channel Advanced Power MOSFET Features V DS 80 V R DS(on),TYP@ VGS=10 V 10 m N-Channel R DS(on),TYP@ VGS=4.5V 12 m Enhancement mode I D 66 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching TO-251 High conversion efficiency Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking info... See More ⇒

Detailed specifications: VSD013N10MS, VSD050P10MS, VSD090N10MS, VSE009NE6MS-G, VSE090N10MS, VSF013N10MS, VSF600N70HS, VSI008N10MS, AON7506, VSI080N06MS, VSO008N10MS, VSO009N06MS-G, VSO009N06MS-GA, VSO011N06MS, VSO012N06MS, VSO025C03MC, VSP007N07MS

Keywords - VSI013N08MS MOSFET specs

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