All MOSFET. VSI013N08MS Datasheet

 

VSI013N08MS Datasheet and Replacement


   Type Designator: VSI013N08MS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 66 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 112 nS
   Cossⓘ - Output Capacitance: 195 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO251
 

 VSI013N08MS substitution

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VSI013N08MS Datasheet (PDF)

 ..1. Size:337K  cn vanguard
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VSI013N08MS

VSI013N08MS 80V/66A N-Channel Advanced Power MOSFET Features V DS 80 VR DS(on),TYP@ VGS=10 V 10 m N-Channel R DS(on),TYP@ VGS=4.5V 12 m Enhancement mode I D 66 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching TO-251 High conversion efficiency Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking info

Datasheet: VSD013N10MS , VSD050P10MS , VSD090N10MS , VSE009NE6MS-G , VSE090N10MS , VSF013N10MS , VSF600N70HS , VSI008N10MS , IRFP250 , VSI080N06MS , VSO008N10MS , VSO009N06MS-G , VSO009N06MS-GA , VSO011N06MS , VSO012N06MS , VSO025C03MC , VSP007N07MS .

Keywords - VSI013N08MS MOSFET datasheet

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