All MOSFET. VSI080N06MS Datasheet

 

VSI080N06MS Datasheet and Replacement


   Type Designator: VSI080N06MS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
   Package: TO251S
 

 VSI080N06MS substitution

   - MOSFET ⓘ Cross-Reference Search

 

VSI080N06MS Datasheet (PDF)

 ..1. Size:238K  cn vanguard
 vsi080n06ms.pdf pdf_icon

VSI080N06MS

VSI080N06MS 60V/15A N-Channel Advanced Power MOSFET V DS 60 VFeatures R DS(on),typ@VGS=10V 68 m N-Channel R DS(on),typ@VGS=4.5V 85 m Enhancement mode I D 15 A Very low on-resistance @ VGS=4.5 V Fast Switching TO-251-S Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking information VSI080N06MS TO-251-S 080N06 8

Datasheet: VSD050P10MS , VSD090N10MS , VSE009NE6MS-G , VSE090N10MS , VSF013N10MS , VSF600N70HS , VSI008N10MS , VSI013N08MS , 20N50 , VSO008N10MS , VSO009N06MS-G , VSO009N06MS-GA , VSO011N06MS , VSO012N06MS , VSO025C03MC , VSP007N07MS , VSP007P06MS .

History: CS2N60

Keywords - VSI080N06MS MOSFET datasheet

 VSI080N06MS cross reference
 VSI080N06MS equivalent finder
 VSI080N06MS lookup
 VSI080N06MS substitution
 VSI080N06MS replacement

 

 
Back to Top

 


 
.