VSI080N06MS Datasheet and Replacement
Type Designator: VSI080N06MS
Marking Code: 080N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 16 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Qg ⓘ - Total Gate Charge: 6 nC
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 40 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm
Package: TO251S
VSI080N06MS Datasheet (PDF)
vsi080n06ms.pdf

VSI080N06MS 60V/15A N-Channel Advanced Power MOSFET V DS 60 VFeatures R DS(on),typ@VGS=10V 68 m N-Channel R DS(on),typ@VGS=4.5V 85 m Enhancement mode I D 15 A Very low on-resistance @ VGS=4.5 V Fast Switching TO-251-S Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking information VSI080N06MS TO-251-S 080N06 8
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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