All MOSFET. VSO011N06MS Datasheet

 

VSO011N06MS Datasheet and Replacement


   Type Designator: VSO011N06MS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: SOP8
 

 VSO011N06MS substitution

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VSO011N06MS Datasheet (PDF)

 ..1. Size:784K  cn vanguard
 vso011n06ms.pdf pdf_icon

VSO011N06MS

VSO011N06MS 60V/12A N-Channel Advanced Power MOSFET V DS 60 V Features R DS(on),TYP@ VGS=10 V 11 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 12.8 m Enhancement mode I D 12 A Low on-resistance RDS(on) @ VGS=4.5 V 100% Avalanche test SOP8 Pb-free lead plating; RoHS compliant Tape and reel Part ID Package Type Marking inform

 9.1. Size:1173K  cn vanguard
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VSO011N06MS

VSO012N06MS 60V/13A N-Channel Advanced Power MOSFET V DS 60 V Features R DS(on),TYP@ VGS=10 V 9.5 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5V 11.5 m Enhancement mode I D 13 A Very low on-resistance RDS(on) @ VGS=4.5 V Fast Switching SOP8 Pb-free lead plating; RoHS compliant MSL: Level 1 compliant Tape and reel Part ID

Datasheet: VSF013N10MS , VSF600N70HS , VSI008N10MS , VSI013N08MS , VSI080N06MS , VSO008N10MS , VSO009N06MS-G , VSO009N06MS-GA , 18N50 , VSO012N06MS , VSO025C03MC , VSP007N07MS , VSP007P06MS , VSP008N10MSC , VSP020P06MS , VST007N07MS , VST012N06MS .

Keywords - VSO011N06MS MOSFET datasheet

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