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STU802S Spec and Replacement


   Type Designator: STU802S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO252 DPAK

 STU802S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STU802S Specs

 ..1. Size:123K  samhop
 stu802s std802s.pdf pdf_icon

STU802S

Green Product STU/D802S a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 35 @ VGS=10V 80V 25A TO-252 and TO-251 Package. 50 @ VGS=4.5V D D D G G S S G STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(l-P... See More ⇒

 9.1. Size:1084K  st
 stu80n4f6.pdf pdf_icon

STU802S

STU80N4F6 N-channel 40 V, 5.8 m typ., 80 A STripFET VI DeepGATE Power MOSFET in a IPAK package Datasheet - production data Features Order code VDS RDS(on) max ID STU80N4F6 40 V 6.3 m 80 A TAB Low gate charge 3 Very low on-resistance 2 1 High avalanche ruggedness IPAK Applications Switching applications Figure 1. Internal schematic diagram Description... See More ⇒

Detailed specifications: 2SJ279 , FCD4N60 , IRFD9020 , FCD5N60 , STU9916L , FCD7N60 , STU816S , FCD9N60NTM , IRFP250N , FCH22N60N , STU670S , FCH25N60N , STU668S , FCH35N60 , STU666S , FCH47N60 , STU664S .

History: AP3P010YT

Keywords - STU802S MOSFET specs

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