STU802S Datasheet. Specs and Replacement

Type Designator: STU802S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TO252 DPAK

  📄📄 Copy 

STU802S substitution

- MOSFET ⓘ Cross-Reference Search

 

STU802S datasheet

 ..1. Size:123K  samhop
 stu802s std802s.pdf pdf_icon

STU802S

Green Product STU/D802S a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 35 @ VGS=10V 80V 25A TO-252 and TO-251 Package. 50 @ VGS=4.5V D D D G G S S G STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(l-P... See More ⇒

 9.1. Size:1084K  st
 stu80n4f6.pdf pdf_icon

STU802S

STU80N4F6 N-channel 40 V, 5.8 m typ., 80 A STripFET VI DeepGATE Power MOSFET in a IPAK package Datasheet - production data Features Order code VDS RDS(on) max ID STU80N4F6 40 V 6.3 m 80 A TAB Low gate charge 3 Very low on-resistance 2 1 High avalanche ruggedness IPAK Applications Switching applications Figure 1. Internal schematic diagram Description... See More ⇒

Detailed specifications: 2SJ279, FCD4N60, IRFD9020, FCD5N60, STU9916L, FCD7N60, STU816S, FCD9N60NTM, IRFP250N, FCH22N60N, STU670S, FCH25N60N, STU668S, FCH35N60, STU666S, FCH47N60, STU664S

Keywords - STU802S MOSFET specs

 STU802S cross reference

 STU802S equivalent finder

 STU802S pdf lookup

 STU802S substitution

 STU802S replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility