All MOSFET. STU802S Datasheet

 

STU802S Datasheet and Replacement


   Type Designator: STU802S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Qg ⓘ - Total Gate Charge: 50 nC
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO252 DPAK
 

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STU802S Datasheet (PDF)

 ..1. Size:123K  samhop
 stu802s std802s.pdf pdf_icon

STU802S

GreenProductSTU/D802SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.35 @ VGS=10V80V 25A TO-252 and TO-251 Package.50 @ VGS=4.5VDDDGGSSGSTU SERIES STD SERIESTO-252AA(D-PAK) TO-251(l-P

 9.1. Size:1084K  st
 stu80n4f6.pdf pdf_icon

STU802S

STU80N4F6N-channel 40 V, 5.8 m typ., 80 A STripFET VI DeepGATE Power MOSFET in a IPAK packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTU80N4F6 40 V 6.3 m 80 ATAB Low gate charge3 Very low on-resistance21 High avalanche ruggednessIPAKApplications Switching applicationsFigure 1. Internal schematic diagramDescription

Datasheet: 2SJ279 , FCD4N60 , IRFD9020 , FCD5N60 , STU9916L , FCD7N60 , STU816S , FCD9N60NTM , 2SK3878 , FCH22N60N , STU670S , FCH25N60N , STU668S , FCH35N60 , STU666S , FCH47N60 , STU664S .

History: BF995

Keywords - STU802S MOSFET datasheet

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