VSP020P06MS PDF and Equivalents Search

 

VSP020P06MS Specs and Replacement

Type Designator: VSP020P06MS

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 340 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: PDFN5X6

VSP020P06MS substitution

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VSP020P06MS datasheet

 ..1. Size:367K  cn vanguard
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VSP020P06MS

VSP020P06MS -60V/-65A P-Channel Advanced Power MOSFET Features V DS -60 V R DS(on),TYP@ VGS=-10 V 10 m P-Channel -5V Logic Level Control R DS(on),TYP@ VGS=-4.5V 13 m Very low on-resistance RDS(on) @ VGS=-4.5 V I D -65 A Fast Switching Enhancement mode PDFN5x6 100% Avalanche Tested Pb-free lead plating; RoHS compliant Part ID Package Type ... See More ⇒

Detailed specifications: VSO009N06MS-G, VSO009N06MS-GA, VSO011N06MS, VSO012N06MS, VSO025C03MC, VSP007N07MS, VSP007P06MS, VSP008N10MSC, 5N60, VST007N07MS, VST012N06MS, VST018N10MS, 2SK2897-01, 2SK2907-01, 2SK2908-01L, 2SK2908-01S, 2SK2918-01

Keywords - VSP020P06MS MOSFET specs

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