All MOSFET. VSP020P06MS Datasheet

 

VSP020P06MS Datasheet and Replacement


   Type Designator: VSP020P06MS
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 24 nS
   Cossⓘ - Output Capacitance: 340 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: PDFN5X6
 

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VSP020P06MS Datasheet (PDF)

 ..1. Size:367K  cn vanguard
 vsp020p06ms.pdf pdf_icon

VSP020P06MS

VSP020P06MS -60V/-65A P-Channel Advanced Power MOSFET Features V DS -60 VR DS(on),TYP@ VGS=-10 V 10 m P-Channel-5V Logic Level Control R DS(on),TYP@ VGS=-4.5V 13 m Very low on-resistance RDS(on) @ VGS=-4.5 V I D -65 A Fast Switching Enhancement mode PDFN5x6 100% Avalanche Tested Pb-free lead plating; RoHS compliant Part ID Package Type

Datasheet: VSO009N06MS-G , VSO009N06MS-GA , VSO011N06MS , VSO012N06MS , VSO025C03MC , VSP007N07MS , VSP007P06MS , VSP008N10MSC , 13N50 , VST007N07MS , VST012N06MS , VST018N10MS , 2SK2897-01 , 2SK2907-01 , 2SK2908-01L , 2SK2908-01S , 2SK2918-01 .

History: FDU8880 | SM6011NSF | AM2308 | IXFT30N40Q | PHD18NQ10T | H02N60SI | PKCH6BB

Keywords - VSP020P06MS MOSFET datasheet

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