VST007N07MS MOSFET. Datasheet pdf. Equivalent
Type Designator: VST007N07MS
Marking Code: 007N07M
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id|ⓘ - Maximum Drain Current: 80 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 71 nC
trⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 225 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TO220AB
VST007N07MS Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VST007N07MS Datasheet (PDF)
..1. Size:766K cn vanguard
vst007n07ms.pdf
vst007n07ms.pdf
VST007N07MS 80V/80A N-Channel Advanced Power MOSFET V DS 80 V Features R DS(on),TYP@ VGS=10 V 8 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 9 m Enhancement mode I D 80 A Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology TO-220AB 100% Avalanche Tested Pb-free lead plating; RoHS compliant Tape and reel Part ID
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