VST007N07MS PDF and Equivalents Search

 

VST007N07MS Specs and Replacement

Type Designator: VST007N07MS

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 120 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 17 nS

Cossⓘ - Output Capacitance: 225 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TO220AB

VST007N07MS substitution

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VST007N07MS datasheet

 ..1. Size:766K  cn vanguard
 vst007n07ms.pdf pdf_icon

VST007N07MS

VST007N07MS 80V/80A N-Channel Advanced Power MOSFET V DS 80 V Features R DS(on),TYP@ VGS=10 V 8 m N-Channel 5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 9 m Enhancement mode I D 80 A Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology TO-220AB 100% Avalanche Tested Pb-free lead plating; RoHS compliant Tape and reel Part ID ... See More ⇒

Detailed specifications: VSO009N06MS-GA, VSO011N06MS, VSO012N06MS, VSO025C03MC, VSP007N07MS, VSP007P06MS, VSP008N10MSC, VSP020P06MS, RFP50N06, VST012N06MS, VST018N10MS, 2SK2897-01, 2SK2907-01, 2SK2908-01L, 2SK2908-01S, 2SK2918-01, 2SK2923

Keywords - VST007N07MS MOSFET specs

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