All MOSFET. VST007N07MS Datasheet

 

VST007N07MS MOSFET. Datasheet pdf. Equivalent


   Type Designator: VST007N07MS
   Marking Code: 007N07M
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 80 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 71 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO220AB

 VST007N07MS Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

VST007N07MS Datasheet (PDF)

 ..1. Size:766K  cn vanguard
 vst007n07ms.pdf

VST007N07MS VST007N07MS

VST007N07MS 80V/80A N-Channel Advanced Power MOSFET V DS 80 V Features R DS(on),TYP@ VGS=10 V 8 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 9 m Enhancement mode I D 80 A Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology TO-220AB 100% Avalanche Tested Pb-free lead plating; RoHS compliant Tape and reel Part ID

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: SI9424BDY

 

 
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