All MOSFET. VST007N07MS Datasheet

 

VST007N07MS Datasheet and Replacement


   Type Designator: VST007N07MS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 120 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 225 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO220AB
 

 VST007N07MS substitution

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VST007N07MS Datasheet (PDF)

 ..1. Size:766K  cn vanguard
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VST007N07MS

VST007N07MS 80V/80A N-Channel Advanced Power MOSFET V DS 80 V Features R DS(on),TYP@ VGS=10 V 8 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 9 m Enhancement mode I D 80 A Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology TO-220AB 100% Avalanche Tested Pb-free lead plating; RoHS compliant Tape and reel Part ID

Datasheet: VSO009N06MS-GA , VSO011N06MS , VSO012N06MS , VSO025C03MC , VSP007N07MS , VSP007P06MS , VSP008N10MSC , VSP020P06MS , SKD502T , VST012N06MS , VST018N10MS , 2SK2897-01 , 2SK2907-01 , 2SK2908-01L , 2SK2908-01S , 2SK2918-01 , 2SK2923 .

History: IXFC14N80P | AU7N60S | BSC010N04LS6 | NCE65N260K | ME2306A | CED02N6G | SSF2300A

Keywords - VST007N07MS MOSFET datasheet

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