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STU670S Spec and Replacement


   Type Designator: STU670S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Cossⓘ - Output Capacitance: 146 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO252 DPAK

 STU670S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STU670S Specs

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STU670S

STU670S Green Product STD670S SamHop Microelectronics Corp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). VDSS ID RDS(ON) (m ) Max Rugged and reliable. 15 @ VGS=10V TO-252 and TO-251 Package. 60V 36A 23 @ VGS=4.5V G S STU SERIES STD SERIES TO-252AA(D-PAK) TO-251(I-PAK) ABSOLUTE... See More ⇒

Detailed specifications: IRFD9020 , FCD5N60 , STU9916L , FCD7N60 , STU816S , FCD9N60NTM , STU802S , FCH22N60N , IRF9540 , FCH25N60N , STU668S , FCH35N60 , STU666S , FCH47N60 , STU664S , FCH47N60F , STU660 .

History: WMO07N65C2

Keywords - STU670S MOSFET specs

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