FCH25N60N PDF and Equivalents Search

 

FCH25N60N Specs and Replacement

Type Designator: FCH25N60N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 216 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm

Package: TO247 TO3P TO3PF

FCH25N60N substitution

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FCH25N60N datasheet

 ..1. Size:579K  fairchild semi
 fch25n60n.pdf pdf_icon

FCH25N60N

January 2011 SupreMOS FCH25N60N tm N-Channel MOSFET 600V, 25A, 0.126 Features Description RDS(on) = 0.108 ( Typ.) at VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 57nC) process that differentiates it from preceding multi-epi based tech- n... See More ⇒

Detailed specifications: FCD5N60 , STU9916L , FCD7N60 , STU816S , FCD9N60NTM , STU802S , FCH22N60N , STU670S , AON7408 , STU668S , FCH35N60 , STU666S , FCH47N60 , STU664S , FCH47N60F , STU660 , FCH47N60N .

Keywords - FCH25N60N MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs

 

 

 


 
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