FCH25N60N MOSFET. Datasheet pdf. Equivalent
Type Designator: FCH25N60N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 216 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 16 A
Maximum Junction Temperature (Tj): 150 °C
Maximum Drain-Source On-State Resistance (Rds): 0.125 Ohm
Package: TO247_TO3P_TO3PF
FCH25N60N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FCH25N60N Datasheet (PDF)
1.1. fch25n60n.pdf 
Size:579K _fairchild_semi
January 2011 SupreMOS® FCH25N60N tm N-Channel MOSFET 600V, 25A, 0.126? Features Description • RDS(on) = 0.108? ( Typ.) at VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling • Ultra Low Gate Charge ( Typ. Qg = 57nC) process that differentiates it from preceding multi-epi based tech- nologies. By
Datasheet: FCD5N60 , STU9916L , FCD7N60 , STU816S , FCD9N60NTM , STU802S , FCH22N60N , STU670S , IRF2807 , STU668S , FCH35N60 , STU666S , FCH47N60 , STU664S , FCH47N60F , STU660 , FCH47N60N .
