All MOSFET. FCH25N60N Datasheet

 

FCH25N60N Datasheet and Replacement


   Type Designator: FCH25N60N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 216 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 57 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: TO247 TO3P TO3PF
 

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FCH25N60N Datasheet (PDF)

 ..1. Size:579K  fairchild semi
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FCH25N60N

January 2011SupreMOSFCH25N60NtmN-Channel MOSFET 600V, 25A, 0.126Features Description RDS(on) = 0.108 ( Typ.) at VGS = 10V, ID = 12.5A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 57nC)process that differentiates it from preceding multi-epi based tech-n

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