All MOSFET. SM180R65CT1TL Datasheet

 

SM180R65CT1TL Datasheet and Replacement


   Type Designator: SM180R65CT1TL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 168 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 1480 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO220
 

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SM180R65CT1TL Datasheet (PDF)

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SM180R65CT1TL

SM180R65C30V /36A Single N Power MOSFET N-Channel Super Junction Power MOSFET Description ID 20A SM180R65C is power MOSFET using advanced super junction technology that can realize very low VDSS 650V on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling Rdson (max.) 0.18(VGS=10V, ID=10A) technology. These user friendly dev

Datasheet: YTF150 , YTF153 , YTF250 , YTF251 , SM140R50CT2TL , SM140R50CT1TL , SM140R50CT8TL , SM180R65CT2TL , IRF740 , SM180R65CT8TL , SM2301 , SM2302 , SM2305 , SM2306 , SM2312SRL , SM2314 , SM3012T9RL .

History: IPD530N15N3G

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