SM180R65CT1TL PDF and Equivalents Search

 

SM180R65CT1TL Specs and Replacement

Type Designator: SM180R65CT1TL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 168 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 1480 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO220

SM180R65CT1TL substitution

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SM180R65CT1TL datasheet

 5.1. Size:864K  cn sps
 sm180r65c.pdf pdf_icon

SM180R65CT1TL

SM180R65C 30V /36A Single N Power MOSFET N-Channel Super Junction Power MOSFET Description ID 20A SM180R65C is power MOSFET using advanced super junction technology that can realize very low VDSS 650V on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling Rdson (max.) 0.18 (VGS=10V, ID=10A) technology. These user friendly dev... See More ⇒

Detailed specifications: YTF150, YTF153, YTF250, YTF251, SM140R50CT2TL, SM140R50CT1TL, SM140R50CT8TL, SM180R65CT2TL, IRF740, SM180R65CT8TL, SM2301, SM2302, SM2305, SM2306, SM2312SRL, SM2314, SM3012T9RL

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