FCH35N60 MOSFET. Datasheet pdf. Equivalent
Type Designator: FCH35N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 312.5 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 35 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 139 nC
Maximum Drain-Source On-State Resistance (Rds): 0.098 Ohm
Package: TO247_TO3P_TO3PF
FCH35N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FCH35N60 Datasheet (PDF)
1.1. fch35n60.pdf 
Size:1434K _fairchild_semi
February 2010 SuperFETTM FCH35N60 600V N-Channel MOSFET Features Description SuperFETTM is Farichilds proprietary, new generation of high 650V @ TJ = 150C voltage MOSFET family that is utilizing an advanced charge Typ.RDS(on) = 0.079? balance mechanism for outstanding low on-resistance and lower Ultra low gate charge ( Typ. Qg = 139nC ) gate charge performance. Low effec
Datasheet: IRFP255 , IRFP260 , IRFP264 , IRFP330 , IRFP331 , IRFP332 , IRFP333 , IRFP340 , 2N5484 , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC .
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