All MOSFET. FCH35N60 Datasheet

 

FCH35N60 MOSFET. Datasheet pdf. Equivalent

Type Designator: FCH35N60

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 312.5 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 35 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 139 nC

Maximum Drain-Source On-State Resistance (Rds): 0.098 Ohm

Package: TO247, TO3P, TO3PF

FCH35N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCH35N60 Datasheet (PDF)

1.1. fch35n60.pdf Size:1434K _fairchild_semi

FCH35N60
FCH35N60

February 2010 SuperFETTM FCH35N60 600V N-Channel MOSFET Features Description SuperFETTM is Farichilds proprietary, new generation of high 650V @ TJ = 150C voltage MOSFET family that is utilizing an advanced charge Typ.RDS(on) = 0.079? balance mechanism for outstanding low on-resistance and lower Ultra low gate charge ( Typ. Qg = 139nC ) gate charge performance. Low effec

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