All MOSFET. FCH35N60 Datasheet

 

FCH35N60 Datasheet and Replacement


   Type Designator: FCH35N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 312.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 35 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.098 Ohm
   Package: TO247 TO3P TO3PF
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FCH35N60 Datasheet (PDF)

 ..1. Size:1434K  fairchild semi
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FCH35N60

February 2010SuperFETTMFCH35N60600V N-Channel MOSFET Features DescriptionSuperFETTM is Farichilds proprietary, new generation of high 650V @ TJ = 150Cvoltage MOSFET family that is utilizing an advanced charge Typ.RDS(on) = 0.079 balance mechanism for outstanding low on-resistance and lower Ultra low gate charge ( Typ. Qg = 139nC ) gate charge performance.

Datasheet: FCD7N60 , STU816S , FCD9N60NTM , STU802S , FCH22N60N , STU670S , FCH25N60N , STU668S , IRF1010E , STU666S , FCH47N60 , STU664S , FCH47N60F , STU660 , FCH47N60N , STU650S , FCH47N60NF .

History: CMP80N06 | SM2F04NSU | BRCS200P03DP | AOW7S60 | AP10TN010CMT | TSM4424CS | SFB052N100C2

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