All MOSFET. SM360R65CT2TL Datasheet

 

SM360R65CT2TL Datasheet and Replacement


   Type Designator: SM360R65CT2TL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 32 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 680 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO220F
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SM360R65CT2TL Datasheet (PDF)

 5.1. Size:633K  cn sps
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SM360R65CT2TL

SM360R65C30V /36A Single N Power MOSFET N-Channel Super Junction Power MOSFETDescription ID 13A SM360R65C is power MOSFET using advanced super junction technology that can realize very low VDSS 650V on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling Rdson (max.) 0.36(VGS=10V, ID=6.5A) technology. These user friendly dev

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History: NCEP048N85M | WMM07N65C4 | SM4186T9RL | TPCA8047-H | APT10021JFLL | NP180N04TUJ | ZVN4210GTC

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