All MOSFET. SM360R65CT1TL Datasheet

 

SM360R65CT1TL MOSFET. Datasheet pdf. Equivalent


   Type Designator: SM360R65CT1TL
   Marking Code: 360R65C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 87 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 23 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 680 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO220

 SM360R65CT1TL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SM360R65CT1TL Datasheet (PDF)

 5.1. Size:633K  cn sps
 sm360r65c.pdf

SM360R65CT1TL SM360R65CT1TL

SM360R65C30V /36A Single N Power MOSFET N-Channel Super Junction Power MOSFETDescription ID 13A SM360R65C is power MOSFET using advanced super junction technology that can realize very low VDSS 650V on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling Rdson (max.) 0.36(VGS=10V, ID=6.5A) technology. These user friendly dev

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top