SM360R65CT1TL MOSFET. Datasheet pdf. Equivalent
Type Designator: SM360R65CT1TL
Marking Code: 360R65C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 87 W
Maximum Drain-Source Voltage |Vds|: 650 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 13 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 23 nC
Rise Time (tr): 23 nS
Drain-Source Capacitance (Cd): 680 pF
Maximum Drain-Source On-State Resistance (Rds): 0.36 Ohm
Package: TO220
SM360R65CT1TL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SM360R65CT1TL Datasheet (PDF)
5.1. Size:633K cn sps
sm360r65c.pdf
sm360r65c.pdf
SM360R65C30V /36A Single N Power MOSFET N-Channel Super Junction Power MOSFETDescription ID 13A SM360R65C is power MOSFET using advanced super junction technology that can realize very low VDSS 650V on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling Rdson (max.) 0.36(VGS=10V, ID=6.5A) technology. These user friendly dev
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