SM4132T9RL Datasheet. Specs and Replacement
Type Designator: SM4132T9RL
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 13.6 nS
Cossⓘ - Output Capacitance: 700 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO252
SM4132T9RL substitution
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SM4132T9RL datasheet
sm4132t9rl.pdf
SM4132T9RL 30V /85A Single N Power MOSFET H N03H N 30V /85A Single N Power MOSFET 85N03H General Description 30 V V DS 30V /85A Single N Power MOSFET 2.8 m RDS(on),TYP@VGS=10V Very low on-resistance RDS(on) @ VGS=4.5 V 4.2 m RDS(on),TYP@VGS=4.5 Pb-free lead plating; RoHS compliant 85 A ID Tape and reel Part ID Package Type Marking infomation 100% UIS Tested 100% Rg Tested S... See More ⇒
gsm4134w.pdf
GSM4134W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4134W, N-Channel enhancement mode 30V/12A,RDS(ON)=16m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=18m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low SOP-8P pac... See More ⇒
gsm4134.pdf
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4134, N-Channel enhancement mode 30V/12A,RDS(ON)=15m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=20m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low SOP-8P package design ... See More ⇒
Detailed specifications: SM3402SRL, SM3404SRL, SM3407, SM3415, SM3416, SM360R65CT2TL, SM360R65CT1TL, SM4012T9RL, 2N7000, SM4146T9RL, SM4184T9RL, SM4186T9RL, SM418T9RL, SM420R50CT9RL, SM420R65CT2TL, SM420R65CT1TL, SM4286T9RL
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