SM4132T9RL Datasheet and Replacement
Type Designator: SM4132T9RL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 85 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 13.6 nS
Cossⓘ - Output Capacitance: 700 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004 Ohm
Package: TO252
SM4132T9RL substitution
SM4132T9RL Datasheet (PDF)
sm4132t9rl.pdf

SM4132T9RL30V /85A Single N Power MOSFET H N03H N 30V /85A Single N Power MOSFET 85N03HGeneral Description 30 VV DS30V /85A Single N Power MOSFET 2.8 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 4.2 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 85 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg TestedS
gsm4134w.pdf

GSM4134W 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4134W, N-Channel enhancement mode 30V/12A,RDS(ON)=16m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=18m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low SOP-8P pac
gsm4134.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4134, N-Channel enhancement mode 30V/12A,RDS(ON)=15m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=20m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited for low SOP-8P package design
Datasheet: SM3402SRL , SM3404SRL , SM3407 , SM3415 , SM3416 , SM360R65CT2TL , SM360R65CT1TL , SM4012T9RL , IRF9540 , SM4146T9RL , SM4184T9RL , SM4186T9RL , SM418T9RL , SM420R50CT9RL , SM420R65CT2TL , SM420R65CT1TL , SM4286T9RL .
Keywords - SM4132T9RL MOSFET datasheet
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History: SIHF9530S | SFF440



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