All MOSFET. SM4146T9RL Datasheet

 

SM4146T9RL MOSFET. Datasheet pdf. Equivalent


   Type Designator: SM4146T9RL
   Marking Code: 55N03
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 55 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 375 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0056 Ohm
   Package: TO252

 SM4146T9RL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SM4146T9RL Datasheet (PDF)

 ..1. Size:129K  cn sps
sm4146t9rl.pdf

SM4146T9RL
SM4146T9RL

SM4146T9RL30V /55A Single N Power MOSFET H N03H N 30V /55A Single N Power MOSFET 55N03HGeneral Description 30 VV DS30V /55A Single N Power MOSFET 3.9 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 6.7 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 55 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg TestedS

 9.1. Size:61K  taiwansemi
tsm414k34cs.pdf

SM4146T9RL
SM4146T9RL

TSM414K34 30V N-Channel MOSFET with Schottky Diode SOP-8 Pin Definition: MOSFET PRODUCT SUMMARY 1. Anode 8. Cathode VDS (V) RDS(on)(m) ID (A) 2. Anode 7. Cathode 3. Source 6. Drain 55 @ VGS = 10V 4 30 4. Gate 5. Drain 65 @ VGS = 4.5V 2 SCHOTTKY PRODUCT SUMMARY VRRM (V) VF (V) IF (A) 30 0.51 3 Block Diagram Features Advance Trench Process Technology

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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