All MOSFET. SM4286T9RL Datasheet

 

SM4286T9RL Datasheet and Replacement


   Type Designator: SM4286T9RL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 14 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 2.8 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.115 Ohm
   Package: TO252
 

 SM4286T9RL substitution

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SM4286T9RL Datasheet (PDF)

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SM4286T9RL

SM4286T9RL100V /14A Single N Power MOSFET H N10H N 100V /14A Single N Power MOSFET 14N10HGeneral Description 100 VV DS100V /14A Single N Power MOSFET 90.0 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 105.0 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 14 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg Te

Datasheet: SM4132T9RL , SM4146T9RL , SM4184T9RL , SM4186T9RL , SM418T9RL , SM420R50CT9RL , SM420R65CT2TL , SM420R65CT1TL , IRFP260 , SM4306PRL , SM4404BPRL , SM4405PRL , SM4410 , SM4411 , SM4421 , SM4435 , SM4441 .

History: AM7101P | IPB60R120P7 | SFB049N80BI3 | FQI27P06TU | SPE7N65G | IPT019N08N5 | FDJ128N

Keywords - SM4286T9RL MOSFET datasheet

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