SM4828APRL Specs and Replacement
Type Designator: SM4828APRL
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SOP8
SM4828APRL substitution
- MOSFET ⓘ Cross-Reference Search
SM4828APRL datasheet
sm4828aprl.pdf
SM4828APRL 60V /15A Dual 2N Power MOSFET C B06C B 60V /15A Dual 2N Power MOSFET 15B06C General Description 60 V V DS 60V /15A Dual 2N Power MOSFET 14.0 m RDS(on),TYP@VGS=10V Very low on-resistance RDS(on) @ VGS=4.5 V 25.0 m RDS(on),TYP@VGS=4.5 Pb-free lead plating; RoHS compliant 15 A ID Tape and reel Part ID Package Type Marking infomation 100% UIS Tested 100% Rg Tested SM... See More ⇒
gsm4822ws.pdf
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4822WS, N-Channel enhancement mode 30V/6.0A,RDS(ON)=34m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.0A,RDS(ON)=44m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage powe... See More ⇒
gsm4822s.pdf
30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4822S, N-Channel enhancement mode 30V/6.0A,RDS(ON)=30m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.0A,RDS(ON)=42m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power... See More ⇒
Detailed specifications: SM4627PRL, SM4800, SM4803APRL, SM4805PRL, SM4807PRL, SM480T9RL, SM4812PRL, SM4818, TK10A60D, SM4840PRL, SM4842PRL, SM4862EPRL, SM4953, SM514T9RL, SM600R65CT9RL, SM600R65CT2TL, SM600R65CT1TL
Keywords - SM4828APRL MOSFET specs
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