SM4828APRL Datasheet and Replacement
Type Designator: SM4828APRL
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SOP8
SM4828APRL substitution
SM4828APRL Datasheet (PDF)
sm4828aprl.pdf

SM4828APRL60V /15A Dual 2N Power MOSFET C B06C B 60V /15A Dual 2N Power MOSFET 15B06CGeneral Description 60 VV DS60V /15A Dual 2N Power MOSFET 14.0 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 25.0 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 15 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg TestedSM
gsm4822ws.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4822WS, N-Channel enhancement mode 30V/6.0A,RDS(ON)=34m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.0A,RDS(ON)=44m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage powe
gsm4822s.pdf

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4822S, N-Channel enhancement mode 30V/6.0A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.0A,RDS(ON)=42m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power
Datasheet: SM4627PRL , SM4800 , SM4803APRL , SM4805PRL , SM4807PRL , SM480T9RL , SM4812PRL , SM4818 , IRFZ24N , SM4840PRL , SM4842PRL , SM4862EPRL , SM4953 , SM514T9RL , SM600R65CT9RL , SM600R65CT2TL , SM600R65CT1TL .
History: KNH7150A
Keywords - SM4828APRL MOSFET datasheet
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History: KNH7150A



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