SM4828APRL - параметры транзистора MOSFET, его аналоги, datasheet

SM4828APRL Datasheet (PDF)

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sm4828aprl.pdf pdf_icon

SM4828APRL60V /15A Dual 2N Power MOSFET C B06C B 60V /15A Dual 2N Power MOSFET 15B06CGeneral Description 60 VV DS60V /15A Dual 2N Power MOSFET 14.0 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 25.0 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 15 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg TestedSM

9.1. Size:747K globaltech semi
gsm4822ws.pdf pdf_icon

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4822WS, N-Channel enhancement mode 30V/6.0A,RDS(ON)=34m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.0A,RDS(ON)=44m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage powe

9.2. Size:813K globaltech semi
gsm4822s.pdf pdf_icon

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM4822S, N-Channel enhancement mode 30V/6.0A,RDS(ON)=30m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/5.0A,RDS(ON)=42m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power

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