All MOSFET. SM6204D1RL Datasheet

 

SM6204D1RL Datasheet and Replacement


   Type Designator: SM6204D1RL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4.4 nS
   Cossⓘ - Output Capacitance: 220 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: DFN5X6
 

 SM6204D1RL substitution

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SM6204D1RL Datasheet (PDF)

 ..1. Size:782K  cn sps
 sm6204d1rl.pdf pdf_icon

SM6204D1RL

SM6204D1RL30V /24A Single N Power MOSFET D N03D N 30V /24A Single N Power MOSFET 24N03DGeneral Description 30 VV DS30V /24A Single N Power MOSFET 12.6 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 19.8 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 24 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg Tested

 9.1. Size:952K  globaltech semi
 gsm6202s.pdf pdf_icon

SM6204D1RL

GSM6202S GSM6202S 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM6202S, N-Channel enhancement mode 30V/15A,RDS(ON)=5.2m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=7.0m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited

Datasheet: SM4840PRL , SM4842PRL , SM4862EPRL , SM4953 , SM514T9RL , SM600R65CT9RL , SM600R65CT2TL , SM600R65CT1TL , RFP50N06 , SM6358D1RL , SM6362D1RL , SM6366ED1RL , SM6426D1RL , SM6442D1RL , SM6512D1RL , SM6536D1RL , SM6590D1RL .

History: SM5A26NSF

Keywords - SM6204D1RL MOSFET datasheet

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