SM6204D1RL Datasheet. Specs and Replacement

Type Designator: SM6204D1RL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.4 nS

Cossⓘ - Output Capacitance: 220 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: DFN5X6

SM6204D1RL substitution

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SM6204D1RL datasheet

 ..1. Size:782K  cn sps
 sm6204d1rl.pdf pdf_icon

SM6204D1RL

SM6204D1RL 30V /24A Single N Power MOSFET D N03D N 30V /24A Single N Power MOSFET 24N03D General Description 30 V V DS 30V /24A Single N Power MOSFET 12.6 m RDS(on),TYP@VGS=10V Very low on-resistance RDS(on) @ VGS=4.5 V 19.8 m RDS(on),TYP@VGS=4.5 Pb-free lead plating; RoHS compliant 24 A ID Tape and reel Part ID Package Type Marking infomation 100% UIS Tested 100% Rg Tested ... See More ⇒

 9.1. Size:952K  globaltech semi
 gsm6202s.pdf pdf_icon

SM6204D1RL

GSM6202S GSM6202S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6202S, N-Channel enhancement mode 30V/15A,RDS(ON)=5.2m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=7.0m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited... See More ⇒

Detailed specifications: SM4840PRL, SM4842PRL, SM4862EPRL, SM4953, SM514T9RL, SM600R65CT9RL, SM600R65CT2TL, SM600R65CT1TL, RFP50N06, SM6358D1RL, SM6362D1RL, SM6366ED1RL, SM6426D1RL, SM6442D1RL, SM6512D1RL, SM6536D1RL, SM6590D1RL

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