SM6426D1RL Datasheet. Specs and Replacement

Type Designator: SM6426D1RL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.6 nS

Cossⓘ - Output Capacitance: 290 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: DFN5X6

SM6426D1RL substitution

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SM6426D1RL datasheet

 ..1. Size:849K  cn sps
sm6426d1rl.pdf pdf_icon

SM6426D1RL

SM6426D1RL 30V /65A Single N Power MOSFET D N03D N 30V /65A Single N Power MOSFET 65N03D General Description 30 V V DS 30V /65A Single N Power MOSFET 5.3 m RDS(on),TYP@VGS=10V Very low on-resistance RDS(on) @ VGS=4.5 V 8.3 m RDS(on),TYP@VGS=4.5 Pb-free lead plating; RoHS compliant 65 A ID Tape and reel Part ID Package Type Marking infomation 100% UIS Tested 100% Rg Tested S... See More ⇒

 9.1. Size:1035K  globaltech semi
gsm6424.pdf pdf_icon

SM6426D1RL

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6424,N-Channel enhancement mode 30V/5.0A,RDS(ON)=38m @VGS=10.0V MOSFET, uses Advanced Trench Technology to 30V/4.0A,RDS(ON)=50m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low TSOP-... See More ⇒

Detailed specifications: SM514T9RL, SM600R65CT9RL, SM600R65CT2TL, SM600R65CT1TL, SM6204D1RL, SM6358D1RL, SM6362D1RL, SM6366ED1RL, 20N50, SM6442D1RL, SM6512D1RL, SM6536D1RL, SM6590D1RL, SM66406D1RL, SM6796D1RL, SM6802S1RL, SM9435

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