All MOSFET. SM6426D1RL Datasheet

 

SM6426D1RL Datasheet and Replacement


   Type Designator: SM6426D1RL
   Marking Code: 6426
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 18 nC
   tr ⓘ - Rise Time: 5.6 nS
   Cossⓘ - Output Capacitance: 290 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: DFN5X6
 

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SM6426D1RL Datasheet (PDF)

 ..1. Size:849K  cn sps
 sm6426d1rl.pdf pdf_icon

SM6426D1RL

SM6426D1RL30V /65A Single N Power MOSFET D N03D N 30V /65A Single N Power MOSFET 65N03DGeneral Description 30 VV DS30V /65A Single N Power MOSFET 5.3 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 8.3 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 65 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg TestedS

 9.1. Size:1035K  globaltech semi
 gsm6424.pdf pdf_icon

SM6426D1RL

30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6424,N-Channel enhancement mode 30V/5.0A,RDS(ON)=38m@VGS=10.0V MOSFET, uses Advanced Trench Technology to 30V/4.0A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low TSOP-

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History: IRFZ24NL

Keywords - SM6426D1RL MOSFET datasheet

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