All MOSFET. SM6512D1RL Datasheet

 

SM6512D1RL Datasheet and Replacement


   Type Designator: SM6512D1RL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 150 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8.8 nS
   Cossⓘ - Output Capacitance: 1327 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm
   Package: DFN5X6
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SM6512D1RL Datasheet (PDF)

 ..1. Size:778K  cn sps
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SM6512D1RL

SM6512D1RL30V /150A Single N Power MOSFET D N03D N 30V /150A Single N Power MOSFET 150N03DGeneral Description 30 VV DS30V /150A Single N Power MOSFET 1.7 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 2.6 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 150 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg Test

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: HGD750N15M | VBZM18N20 | MTE130N20FP | TK3A60DA | TJ10S04M3L | FDS4935BZ-NL-38 | QS8K13

Keywords - SM6512D1RL MOSFET datasheet

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