SM6536D1RL Datasheet. Specs and Replacement

Type Designator: SM6536D1RL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 35.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.6 nS

Cossⓘ - Output Capacitance: 210 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: DFN5X6

SM6536D1RL substitution

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SM6536D1RL datasheet

 ..1. Size:785K  cn sps
 sm6536d1rl.pdf pdf_icon

SM6536D1RL

SM6536D1RL 30V /55A Single N Power MOSFET D N03D N 30V /55A Single N Power MOSFET 55N03D General Description 30 V V DS 30V /55A Single N Power MOSFET 7.0 m RDS(on),TYP@VGS=10V Very low on-resistance RDS(on) @ VGS=4.5 V 11.0 m RDS(on),TYP@VGS=4.5 Pb-free lead plating; RoHS compliant 55 A ID Tape and reel Part ID Package Type Marking infomation 100% UIS Tested 100% Rg Tested ... See More ⇒

 9.1. Size:898K  globaltech semi
 gsm6530s.pdf pdf_icon

SM6536D1RL

GSM6530S GSM6530S 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM6530S, N-Channel enhancement mode 30V/15A,RDS(ON)=4.7m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=6.2m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited... See More ⇒

Detailed specifications: SM600R65CT1TL, SM6204D1RL, SM6358D1RL, SM6362D1RL, SM6366ED1RL, SM6426D1RL, SM6442D1RL, SM6512D1RL, STF13NM60N, SM6590D1RL, SM66406D1RL, SM6796D1RL, SM6802S1RL, SM9435, SM95N03A, SM9926, SMIRF10N65T1TL

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