All MOSFET. SM6536D1RL Datasheet

 

SM6536D1RL Datasheet and Replacement


   Type Designator: SM6536D1RL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 3.6 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: DFN5X6
 

 SM6536D1RL substitution

   - MOSFET ⓘ Cross-Reference Search

 

SM6536D1RL Datasheet (PDF)

 ..1. Size:785K  cn sps
 sm6536d1rl.pdf pdf_icon

SM6536D1RL

SM6536D1RL30V /55A Single N Power MOSFET D N03D N 30V /55A Single N Power MOSFET 55N03DGeneral Description 30 VV DS30V /55A Single N Power MOSFET 7.0 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 11.0 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 55 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg Tested

 9.1. Size:898K  globaltech semi
 gsm6530s.pdf pdf_icon

SM6536D1RL

GSM6530S GSM6530S 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM6530S, N-Channel enhancement mode 30V/15A,RDS(ON)=4.7m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=6.2m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited

Datasheet: SM600R65CT1TL , SM6204D1RL , SM6358D1RL , SM6362D1RL , SM6366ED1RL , SM6426D1RL , SM6442D1RL , SM6512D1RL , IRFZ24N , SM6590D1RL , SM66406D1RL , SM6796D1RL , SM6802S1RL , SM9435 , SM95N03A , SM9926 , SMIRF10N65T1TL .

Keywords - SM6536D1RL MOSFET datasheet

 SM6536D1RL cross reference
 SM6536D1RL equivalent finder
 SM6536D1RL lookup
 SM6536D1RL substitution
 SM6536D1RL replacement

 

 
Back to Top

 


 
.