All MOSFET. SM6536D1RL Datasheet

 

SM6536D1RL Datasheet and Replacement


   Type Designator: SM6536D1RL
   Marking Code: 6536
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 35.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 9 nC
   tr ⓘ - Rise Time: 3.6 nS
   Cossⓘ - Output Capacitance: 210 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: DFN5X6
 

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SM6536D1RL Datasheet (PDF)

 ..1. Size:785K  cn sps
 sm6536d1rl.pdf pdf_icon

SM6536D1RL

SM6536D1RL30V /55A Single N Power MOSFET D N03D N 30V /55A Single N Power MOSFET 55N03DGeneral Description 30 VV DS30V /55A Single N Power MOSFET 7.0 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 11.0 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 55 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg Tested

 9.1. Size:898K  globaltech semi
 gsm6530s.pdf pdf_icon

SM6536D1RL

GSM6530S GSM6530S 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM6530S, N-Channel enhancement mode 30V/15A,RDS(ON)=4.7m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/10A,RDS(ON)=6.2m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly suited

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

Keywords - SM6536D1RL MOSFET datasheet

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