SM6590D1RL MOSFET. Datasheet pdf. Equivalent
Type Designator: SM6590D1RL
Marking Code: 6590
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
|Id|ⓘ - Maximum Drain Current: 100 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 10.4 nS
Cossⓘ - Output Capacitance: 1438 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0048 Ohm
Package: DFN5X6
SM6590D1RL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SM6590D1RL Datasheet (PDF)
sm6590d1rl.pdf
SM6590D1RL40V /100A Single N Power MOSFET D N04D N 40V /100A Single N Power MOSFET 100N04DGeneral Description 40 VV DS40V /100A Single N Power MOSFET 3.7 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 4.8 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 100 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg Test
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