All MOSFET. SM66406D1RL Datasheet

 

SM66406D1RL Datasheet and Replacement


   Type Designator: SM66406D1RL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 36.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 30 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4.4 nS
   Cossⓘ - Output Capacitance: 245 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: DFN5X6
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SM66406D1RL Datasheet (PDF)

 ..1. Size:766K  cn sps
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SM66406D1RL

SM66406D1RL40V /30A Single N Power MOSFET D N04D N 40V /30A Single N Power MOSFET 30N04DGeneral Description 40 VV DS40V /30A Single N Power MOSFET 9.0 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 12.0 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 30 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg Tested

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: MTB23C04J4 | 4N65KL-T2Q-R | TK3A60DA | BF1206F | BUK9510-100B | TTP118N08A | IPI90R1K0C3

Keywords - SM66406D1RL MOSFET datasheet

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