SM6796D1RL MOSFET. Datasheet pdf. Equivalent
Type Designator: SM6796D1RL
Marking Code: 6796
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.9 V
|Id|ⓘ - Maximum Drain Current: 70 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 10.5 nC
trⓘ - Rise Time: 5.2 nS
Cossⓘ - Output Capacitance: 450 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.005 Ohm
Package: DFN5X6
SM6796D1RL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SM6796D1RL Datasheet (PDF)
sm6796d1rl.pdf
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SM6796D1RL30V /70A Single N Power MOSFET D N03D N 30V /70A Single N Power MOSFET 70N03DGeneral Description 30 VV DS30V /70A Single N Power MOSFET 3.5 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 5.5 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 70 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg TestedS
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