All MOSFET. STU650S Datasheet

 

STU650S Datasheet and Replacement


   Type Designator: STU650S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 65 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Qg ⓘ - Total Gate Charge: 6.5 nC
   Cossⓘ - Output Capacitance: 53 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: TO252 DPAK
 

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STU650S Datasheet (PDF)

 ..1. Size:121K  samhop
 stu650s std650s.pdf pdf_icon

STU650S

GreenProductSTU/D650SaS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) MaxVDSS IDRugged and reliable.75 @ VGS=10VTO-252 and TO-251 Package.16A65V97 @ VGS=4.5VGGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 25

 9.1. Size:791K  st
 std65n3llh5 stu65n3llh5.pdf pdf_icon

STU650S

STD65N3LLH5STU65N3LLH5N-channel 30 V, 0.0061 , 65 A, DPAK, IPAKSTripFET V Power MOSFETFeaturesType VDSS RDS(on) max IDSTD65N3LLH5 30 V 0.0069 65 A STU65N3LLH5 30 V 0.0073 65 A3 RDS(on) * Qg industry benchmark 3211 Extremely low on-resistance RDS(on) Very low switching gate chargeDPAK IPAK High avalanche ruggedness Low gate drive pow

Datasheet: STU668S , FCH35N60 , STU666S , FCH47N60 , STU664S , FCH47N60F , STU660 , FCH47N60N , IRLB4132 , FCH47N60NF , STU630S , FCH76N60N , STU624S , FCH76N60NF , STU622S , FCI25N60NF102 , STU618S .

Keywords - STU650S MOSFET datasheet

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