STU650S MOSFET Datasheet: N-Ch, 65V, 16A. Full specification with pinout and replacement list

STU650S Specs and Replacement

Type Designator: STU650S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 65 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 53 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: TO252 DPAK

STU650S substitution

- MOSFET ⓘ Cross-Reference Search

STU650S datasheet

..1. Size:121K samhop
stu650s std650s.pdf pdf_icon

Green Product STU/D650S a S mHop Microelectronics C orp. Ver 1.0 N-Channel Logic Level Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Max VDSS ID Rugged and reliable. 75 @ VGS=10V TO-252 and TO-251 Package. 16A 65V 97 @ VGS=4.5V G G S S STU SERIES STD SERIES ( ) TO - 252AA D- PAK ( ) TO - 25... See More ⇒

9.1. Size:791K st
std65n3llh5 stu65n3llh5.pdf pdf_icon

STD65N3LLH5 STU65N3LLH5 N-channel 30 V, 0.0061 , 65 A, DPAK, IPAK STripFET V Power MOSFET Features Type VDSS RDS(on) max ID STD65N3LLH5 30 V 0.0069 65 A STU65N3LLH5 30 V 0.0073 65 A 3 RDS(on) * Qg industry benchmark 3 2 1 1 Extremely low on-resistance RDS(on) Very low switching gate charge DPAK IPAK High avalanche ruggedness Low gate drive pow... See More ⇒

Detailed specifications: STU668S , FCH35N60 , STU666S , FCH47N60 , STU664S , FCH47N60F , STU660 , FCH47N60N , IRFP260 , FCH47N60NF , STU630S , FCH76N60N , STU624S , FCH76N60NF , STU622S , FCI25N60NF102 , STU618S .