FCP22N60N Specs and Replacement
Type Designator: FCP22N60N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 205 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.165 Ohm
Package: TO220
FCP22N60N substitution
FCP22N60N Specs
fcp22n60n fcpf22n60nt.pdf
July 2009 SupreMOS TM FCP22N60N / FCPF22N60NT tm N-Channel MOSFET 600V, 22A, 0.165 Features Description RDS(on) = 0.140 ( Typ.)@ VGS = 10V, ID = 11A The SupreMOS MOSFET, Fairchild s next generation of high voltage super-junction MOSFETs, employs a deep trench filling BVDSS>650V @ TJ = 150oC process that differentiates it from preceding multi-epi based tech- nologies.... See More ⇒
fcp22n60n fcpf22n60nt.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
fcp220n80.pdf
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒
Detailed specifications: FCP11N60F , STU612D , FCP11N60N , STU610S , FCP13N60N , STU609S , FCP16N60N , STU608S , AO4407 , STU606S , FCP25N60NF102 , STU602S , FCP36N60N , STU6025NL2 , FCP4N60 , STU434S , FCP7N60 .
Keywords - FCP22N60N MOSFET specs
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