All MOSFET. AOD438 Datasheet

 

AOD438 Datasheet and Replacement


   Type Designator: AOD438
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 235 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 1525 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.002(typ) Ohm
   Package: TO252
 

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AOD438 Datasheet (PDF)

 ..1. Size:838K  cn vbsemi
 aod438.pdf pdf_icon

AOD438

AOD438www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.002 at VGS = 10 V 10030 72 nC0.003 at VGS = 4.5 V 90APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETABSOLU

 9.1. Size:141K  aosemi
 aod436.pdf pdf_icon

AOD438

www.DataSheet4U.comAOD436N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesThe AOD436 uses advanced trench technology to VDS (V) = 30Vprovide excellent RDS(ON), low gate charge and low ID = 60A (VGS = 10V)gate resistance. This device is ideally suited for use RDS(ON)

 9.2. Size:110K  aosemi
 aod434.pdf pdf_icon

AOD438

AOD434N-Channel Enhancement Mode Field Effect TransistorGeneral Description FeaturesVDS (V) = 20VThe AOD434 uses advanced trench technology to ID = 18A (VGS = 10V)provide excellent RDS(ON), low gate charge and RDS(ON)

Datasheet: AM4929P-T1 , AM4930N-T1 , AM60N10-70PC , AO2301 , AO4602 , AO4606A , AO4614-30V , AO4816 , IRF830 , AOD522 , AP10P10GH , AP2300GN , AP2301N , AP2305GN , AP2306AGN , AP2306N , AP2308GE .

History: QM2416K | AP9980GM-HF | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | P2003EVT | SIHFDC20

Keywords - AOD438 MOSFET datasheet

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