AOD438 MOSFET Datasheet: N-Ch, 30V, 100A. Full specification with pinout and replacement list

AOD438 Specs and Replacement

Type Designator: AOD438

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 235 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 1525 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.002 typ Ohm

Package: TO252

AOD438 substitution

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AOD438 datasheet

..1. Size:838K cn vbsemi
aod438.pdf pdf_icon

AOD438 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.002 at VGS = 10 V 100 30 72 nC 0.003 at VGS = 4.5 V 90 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S Top View S N-Channel MOSFET ABSOLU... See More ⇒

9.1. Size:141K aosemi
aod436.pdf pdf_icon

www.DataSheet4U.com AOD436 N-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD436 uses advanced trench technology to VDS (V) = 30V provide excellent RDS(ON), low gate charge and low ID = 60A (VGS = 10V) gate resistance. This device is ideally suited for use RDS(ON) ... See More ⇒

9.2. Size:110K aosemi
aod434.pdf pdf_icon

AOD434 N-Channel Enhancement Mode Field Effect Transistor General Description Features VDS (V) = 20V The AOD434 uses advanced trench technology to ID = 18A (VGS = 10V) provide excellent RDS(ON), low gate charge and RDS(ON) ... See More ⇒

Detailed specifications: AM4929P-T1, AM4930N-T1, AM60N10-70PC, AO2301, AO4602, AO4606A, AO4614-30V, AO4816, 2N60, AOD522, AP10P10GH, AP2300GN, AP2301N, AP2305GN, AP2306AGN, AP2306N, AP2308GE