All MOSFET. FCP4N60 Datasheet

 

FCP4N60 Datasheet and Replacement


   Type Designator: FCP4N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: TO220
 

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FCP4N60 Datasheet (PDF)

 ..1. Size:912K  fairchild semi
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FCP4N60

December 2008 TMSuperFETFCP4N60 600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 1.0balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg = 12.8nC) lower gate charge performance.

Datasheet: FCP16N60N , STU608S , FCP22N60N , STU606S , FCP25N60NF102 , STU602S , FCP36N60N , STU6025NL2 , STP80NF70 , STU434S , FCP7N60 , STU432S , FCP9N60N , STU432L , FCPF11N60NT , STU428S , FCPF13N60NT .

History: AOD4104

Keywords - FCP4N60 MOSFET datasheet

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