CMD50N06B PDF and Equivalents Search

 

CMD50N06B Specs and Replacement

Type Designator: CMD50N06B

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 470 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO252

CMD50N06B substitution

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CMD50N06B datasheet

 ..1. Size:860K  cn vbsemi
 cmd50n06b.pdf pdf_icon

CMD50N06B

CMD50N06B www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit ... See More ⇒

 9.1. Size:772K  cn vbsemi
 cmd50p03.pdf pdf_icon

CMD50N06B

CMD50P03 www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Compliant to RoHS Directive 2002/95/EC VDS (V) RDS(on) ( )ID (A)a Available 0.011 at VGS = - 10 V 50 RoHS* - 30 COMPLIANT 0.013 at VGS = - 4.5 V 45 S TO-252 G D G S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Limit Unit Gat... See More ⇒

Detailed specifications: CEM4946, CEM9926, CEM9956A, CEU20N06, CEU50N06, CHMP830JGP, CMD20N06L, CMD20P03, 13N50, CMD50P03, CMD5950, CMN2305M, CMU12N10, CPH3427-TL, CSD17301Q5, D10PF06, D4NK50Z-TO252

Keywords - CMD50N06B MOSFET specs

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