All MOSFET. CMD50P03 Datasheet

 

CMD50P03 Datasheet and Replacement


   Type Designator: CMD50P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 127 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 225 nS
   Cossⓘ - Output Capacitance: 1565 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: TO252
 

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CMD50P03 Datasheet (PDF)

 ..1. Size:772K  cn vbsemi
 cmd50p03.pdf pdf_icon

CMD50P03

CMD50P03www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Compliant to RoHS Directive 2002/95/ECVDS (V) RDS(on) ()ID (A)aAvailable0.011 at VGS = - 10 V 50RoHS*- 30COMPLIANT0.013 at VGS = - 4.5 V 45STO-252GDG SDTop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit UnitGat

 9.1. Size:860K  cn vbsemi
 cmd50n06b.pdf pdf_icon

CMD50P03

CMD50N06Bwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit

Datasheet: CEM9926 , CEM9956A , CEU20N06 , CEU50N06 , CHMP830JGP , CMD20N06L , CMD20P03 , CMD50N06B , RFP50N06 , CMD5950 , CMN2305M , CMU12N10 , CPH3427-TL , CSD17301Q5 , D10PF06 , D4NK50Z-TO252 , DMC2038LVT-7-F .

History: OSG70R1K4FF | SLD60R380S2 | IXTA4N150HV

Keywords - CMD50P03 MOSFET datasheet

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