All MOSFET. CMD5950 Datasheet

 

CMD5950 Datasheet and Replacement


   Type Designator: CMD5950
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 40 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 301 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.033(typ) Ohm
   Package: TO252
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CMD5950 Datasheet (PDF)

 ..1. Size:896K  cn vbsemi
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CMD5950

CMD5950www.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 100DefinitionRDS(on) () at VGS = - 10 V 0.033 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.036 Package with Low Thermal ResistanceID (A) - 40 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS Directive 2

 9.1. Size:1082K  1
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CMD5950

CMD5941/CMU5941P-Channel Silicon MOSFETGeneral Description Product SummaryThe 5941 uses advanced trench BVDSS RDSON ID technology and design to provide -100V 135m -25Aexcellent RDS(ON) with low gate charge. It can be used in a wide Applications variety of applications.Inverters Motor driveDC / DC converterFeatures P-ChannelTO-252/251 Pin ConfigurationDLow ON-

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK2P60D | IRFBG20

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