CMD5950 MOSFET Datasheet: P-Ch, 100V, 40A. Full specification with pinout and replacement list

CMD5950 Specs and Replacement

Type Designator: CMD5950

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 136 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 301 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.033 typ Ohm

Package: TO252

CMD5950 substitution

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CMD5950 datasheet

..1. Size:896K cn vbsemi
cmd5950.pdf pdf_icon

CMD5950 www.VBsemi.tw P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) - 100 Definition RDS(on) ( ) at VGS = - 10 V 0.033 TrenchFET Power MOSFET RDS(on) ( ) at VGS = - 4.5 V 0.036 Package with Low Thermal Resistance ID (A) - 40 100 % Rg and UIS Tested Configuration Single Compliant to RoHS Directive 2... See More ⇒

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cmd5941 cmu5941.pdf pdf_icon

CMD5941/CMU5941 P-Channel Silicon MOSFET General Description Product Summary The 5941 uses advanced trench BVDSS RDSON ID technology and design to provide -100V 135m -25A excellent RDS(ON) with low gate charge. It can be used in a wide Applications variety of applications. Inverters Motor drive DC / DC converter Features P-Channel TO-252/251 Pin Configuration D Low ON-... See More ⇒

Detailed specifications: CEM9956A, CEU20N06, CEU50N06, CHMP830JGP, CMD20N06L, CMD20P03, CMD50N06B, CMD50P03, 12N60, CMN2305M, CMU12N10, CPH3427-TL, CSD17301Q5, D10PF06, D4NK50Z-TO252, DMC2038LVT-7-F, DMC2700UDM-7