All MOSFET. CMD5950 Datasheet

 

CMD5950 Datasheet and Replacement


   Type Designator: CMD5950
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 136 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 40 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 301 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.033(typ) Ohm
   Package: TO252
 

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CMD5950 Datasheet (PDF)

 ..1. Size:896K  cn vbsemi
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CMD5950

CMD5950www.VBsemi.twP-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) - 100DefinitionRDS(on) () at VGS = - 10 V 0.033 TrenchFET Power MOSFETRDS(on) () at VGS = - 4.5 V 0.036 Package with Low Thermal ResistanceID (A) - 40 100 % Rg and UIS TestedConfiguration Single Compliant to RoHS Directive 2

 9.1. Size:1082K  1
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CMD5950

CMD5941/CMU5941P-Channel Silicon MOSFETGeneral Description Product SummaryThe 5941 uses advanced trench BVDSS RDSON ID technology and design to provide -100V 135m -25Aexcellent RDS(ON) with low gate charge. It can be used in a wide Applications variety of applications.Inverters Motor driveDC / DC converterFeatures P-ChannelTO-252/251 Pin ConfigurationDLow ON-

Datasheet: CEM9956A , CEU20N06 , CEU50N06 , CHMP830JGP , CMD20N06L , CMD20P03 , CMD50N06B , CMD50P03 , 4N60 , CMN2305M , CMU12N10 , CPH3427-TL , CSD17301Q5 , D10PF06 , D4NK50Z-TO252 , DMC2038LVT-7-F , DMC2700UDM-7 .

History: ME80N08AF-G | F5020-S | JY09M | IXTU4N60P | SVGP082R6NL5A | 2SK3009P | STP60N05-14

Keywords - CMD5950 MOSFET datasheet

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