CMU12N10 PDF and Equivalents Search

 

CMU12N10 Specs and Replacement

Type Designator: CMU12N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 61 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 110 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.110 typ Ohm

Package: TO251

CMU12N10 substitution

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CMU12N10 datasheet

 ..1. Size:830K  cn vbsemi
 cmu12n10.pdf pdf_icon

CMU12N10

CMU12N10 www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY DT-Trench Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 0.115 at VGS = 10 V 15 100 % Rg Tested 100 0.120 at VGS = 6 V 15 APPLICATIONS Primary Side Switch TO-251 D G S G D S N-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise... See More ⇒

Detailed specifications: CEU50N06, CHMP830JGP, CMD20N06L, CMD20P03, CMD50N06B, CMD50P03, CMD5950, CMN2305M, IRF1010E, CPH3427-TL, CSD17301Q5, D10PF06, D4NK50Z-TO252, DMC2038LVT-7-F, DMC2700UDM-7, DMC3018LSD-13, DMG1013UW-7

Keywords - CMU12N10 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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