All MOSFET. CMU12N10 Datasheet

 

CMU12N10 Datasheet and Replacement


   Type Designator: CMU12N10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 61 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 110 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.110(typ) Ohm
   Package: TO251
 

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CMU12N10 Datasheet (PDF)

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CMU12N10

CMU12N10www.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY DT-Trench Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature0.115 at VGS = 10 V 15 100 % Rg Tested1000.120 at VGS = 6 V 15APPLICATIONS Primary Side SwitchTO-251DGSG D SN-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise

Datasheet: CEU50N06 , CHMP830JGP , CMD20N06L , CMD20P03 , CMD50N06B , CMD50P03 , CMD5950 , CMN2305M , IRF530 , CPH3427-TL , CSD17301Q5 , D10PF06 , D4NK50Z-TO252 , DMC2038LVT-7-F , DMC2700UDM-7 , DMC3018LSD-13 , DMG1013UW-7 .

History: AM3491P | AOLF66610 | TPCS8303 | SI1062X | NCE70N1K4I | CHM10N4NGP | STF25N10F7

Keywords - CMU12N10 MOSFET datasheet

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