EMB60N06A PDF and Equivalents Search

 

EMB60N06A Specs and Replacement

Type Designator: EMB60N06A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 85 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.073 typ Ohm

Package: TO252

EMB60N06A substitution

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EMB60N06A datasheet

 ..1. Size:851K  cn vbsemi
 emb60n06a.pdf pdf_icon

EMB60N06A

EMB60N06A www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.073 at VGS = 10 V 18.2 Material categorization 60 19.8 For definitions of compliance please see 0.085 at VGS = 4.5 V 13.2 TO-252 APPLICATIONS D DC/DC Converters DC/AC Inverters ... See More ⇒

 9.1. Size:692K  rohm
 emb60.pdf pdf_icon

EMB60N06A

EMB60 Datasheet Complex Digital Transistors (Bias Resistor Built-in Transistors) lOutline l Parameter DTr1 and DTr2 EMT6 VCC -50V IC(MAX.) -100mA R1 2.2k EMB60 R2 (SC-107C) 47k lFeatures lInner circuit l l 1) Two DTA023J chips in a EMT6 package. 2) Transister elements are independent, eliminati... See More ⇒

Detailed specifications: DMN6068LK3-13, DMN6068SE-13, DMP3025LK3-13, DMP3056LSD-13, DTM4926, DTM4946, DTU09N03, E10P02, 20N50, EMFA0P02J, F3055L-TO252, FDD390N15AL, FDD3N40TM, FDD8444-NL, FDD8580-6, FDN304P-NL, FDN335N-NL

Keywords - EMB60N06A MOSFET specs

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