All MOSFET. FCP9N60N Datasheet

 

FCP9N60N MOSFET. Datasheet pdf. Equivalent


   Type Designator: FCP9N60N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22 nC
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.385 Ohm
   Package: TO220

 FCP9N60N Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCP9N60N Datasheet (PDF)

 ..1. Size:906K  fairchild semi
fcp9n60n fcpf9n60nt.pdf

FCP9N60N
FCP9N60N

August 2009SupreMOSTMFCP9N60N / FCPF9N60NTtmN-Channel MOSFET 600V, 9A, 0.385Features Description RDS(on) = 0.33 ( Typ.)@ VGS = 10V, ID = 4.5A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra low gate charge ( Typ. Qg = 22nC)process that differentiates it from preceding multi-epi based

 ..2. Size:753K  onsemi
fcp9n60n fcpf9n60nt.pdf

FCP9N60N
FCP9N60N

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FCP25N60NF102 , STU602S , FCP36N60N , STU6025NL2 , FCP4N60 , STU434S , FCP7N60 , STU432S , 10N65 , STU432L , FCPF11N60NT , STU428S , FCPF13N60NT , STU426S , FCPF16N60NT , STU421S , FCPF22N60NT .

 

 
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