EMFA0P02J Specs and Replacement
Type Designator: EMFA0P02J
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 180 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 typ Ohm
Package: SOT23
EMFA0P02J substitution
- MOSFET ⓘ Cross-Reference Search
EMFA0P02J datasheet
emfa0p02j.pdf
EMFA0P02J www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIO... See More ⇒
Detailed specifications: DMN6068SE-13, DMP3025LK3-13, DMP3056LSD-13, DTM4926, DTM4946, DTU09N03, E10P02, EMB60N06A, IRF520, F3055L-TO252, FDD390N15AL, FDD3N40TM, FDD8444-NL, FDD8580-6, FDN304P-NL, FDN335N-NL, FDN337N-NL
Keywords - EMFA0P02J MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: DMG6602S | STK900 | STM4532 | FQD12N20L | F3055L-TO252 | FDPF680N10T | ISW65R041CFD
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