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FDS4465-NL-9 Datasheet and Replacement


   Type Designator: FDS4465-NL-9
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 10.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 57 nC
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 455 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011(typ) Ohm
   Package: SO8
 

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FDS4465-NL-9 Datasheet (PDF)

 ..1. Size:811K  cn vbsemi
 fds4465-nl-9.pdf pdf_icon

FDS4465-NL-9

FDS4465-NL&-9www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7

 7.1. Size:137K  fairchild semi
 fds4465.pdf pdf_icon

FDS4465-NL-9

March 2003 FDS4465 P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 13.5 A, 20 V. RDS(ON) = 8.5 m @ VGS = 4.5 V gate version of Fairchild Semiconductors advanced RDS(ON) = 10.5 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(ON) = 14 m

 7.2. Size:400K  fairchild semi
 fds4465 f085.pdf pdf_icon

FDS4465-NL-9

February 2010tmFDS4465_F085 P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 13.5 A, 20 V. RDS(ON) = 8.5 m @ VGS = 4.5 V gate version of Fairchild Semiconductors advanced RDS(ON) = 10.5 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(

 7.3. Size:264K  onsemi
 fds4465.pdf pdf_icon

FDS4465-NL-9

FDS4465P-Channel 1.8V SpecifiedPOWERTRENCH MOSFETDescriptionThis P-Channel 1.8 V specified MOSFET is a rugged gate versionwww.onsemi.comof ON Semiconductors advanced POWERTRENCH process. It hasbeen optimized for power management applications with a wide rangeof gate drive voltage (1.8 V 8 V).VDSS RDS(on) MAX ID MAXFeatures-20 V 8.5 mW @ -4.5 V -13.5 A 13.5

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Keywords - FDS4465-NL-9 MOSFET datasheet

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