FDS4465-NL-9
MOSFET. Datasheet pdf. Equivalent
Type Designator: FDS4465-NL-9
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 10.9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 57
nC
trⓘ - Rise Time: 12
nS
Cossⓘ -
Output Capacitance: 455
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011(typ)
Ohm
Package:
SO8
FDS4465-NL-9
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FDS4465-NL-9
Datasheet (PDF)
..1. Size:811K cn vbsemi
fds4465-nl-9.pdf
FDS4465-NL&-9www.VBsemi.twP-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d Qg (Typ.) TrenchFET Power MOSFET0.011 at VGS = - 10 V - 13.5 100 % Rg TestedRoHS- 30 29.5 nCCOMPLIANT 100 % UIS Tested0.015 at VGS = - 4.5 V - 11.6APPLICATIONS Load Switch Notebook Adaptor SwitchSO-8 S S1 8 DS D2 7
7.1. Size:137K fairchild semi
fds4465.pdf
March 2003 FDS4465 P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 13.5 A, 20 V. RDS(ON) = 8.5 m @ VGS = 4.5 V gate version of Fairchild Semiconductors advanced RDS(ON) = 10.5 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(ON) = 14 m
7.2. Size:400K fairchild semi
fds4465 f085.pdf
February 2010tmFDS4465_F085 P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET is a rugged 13.5 A, 20 V. RDS(ON) = 8.5 m @ VGS = 4.5 V gate version of Fairchild Semiconductors advanced RDS(ON) = 10.5 m @ VGS = 2.5 V PowerTrench process. It has been optimized for power RDS(
7.3. Size:264K onsemi
fds4465.pdf
FDS4465P-Channel 1.8V SpecifiedPOWERTRENCH MOSFETDescriptionThis P-Channel 1.8 V specified MOSFET is a rugged gate versionwww.onsemi.comof ON Semiconductors advanced POWERTRENCH process. It hasbeen optimized for power management applications with a wide rangeof gate drive voltage (1.8 V 8 V).VDSS RDS(on) MAX ID MAXFeatures-20 V 8.5 mW @ -4.5 V -13.5 A 13.5
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