All MOSFET. FDS8333C Datasheet

 

FDS8333C Datasheet and Replacement


   Type Designator: FDS8333C
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 6.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018(typ) Ohm
   Package: SO8
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FDS8333C Datasheet (PDF)

 ..1. Size:134K  fairchild semi
 fds8333c.pdf pdf_icon

FDS8333C

August 2002 FDS8333C 30V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are Q1 4.1 A, 30V. R = 80 m @ V = 10 V DS(ON) GSproduced using Fairchild Semiconductors R = 130 m @ V = 4.5 V DS(ON) GSadvanced PowerTrench process that has been especially tailored to minimize on-state Q2 3.4 A, 30V. R = 130 m @ V

 ..2. Size:1492K  cn vbsemi
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FDS8333C

FDS8333Cwww.VBsemi.twN- and P-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) () DefinitionID (A)a Qg (Typ.) TrenchFET Power MOSFET0.018 at VGS = 10 V 8e 100 % Rg and UIS TestedN-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC0.024 at VGS = 4.5 V 8e0.032 at VGS

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: DMN60H3D5SK3 | TK2P60D | RTF020P02TL | IRFBG20 | DMN2300UFB4 | DMP2104LP

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