FDS8333C Specs and Replacement
Type Designator: FDS8333C
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 95 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 typ Ohm
Package: SO8
FDS8333C substitution
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FDS8333C datasheet
fds8333c.pdf
August 2002 FDS8333C 30V N & P-Channel PowerTrench MOSFETs General Description Features These N & P-Channel MOSFETs are Q1 4.1 A, 30V. R = 80 m @ V = 10 V DS(ON) GS produced using Fairchild Semiconductor s R = 130 m @ V = 4.5 V DS(ON) GS advanced PowerTrench process that has been especially tailored to minimize on-state Q2 3.4 A, 30V. R = 130 m @ V ... See More ⇒
fds8333c.pdf
FDS8333C www.VBsemi.tw N- and P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Definition ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.018 at VGS = 10 V 8e 100 % Rg and UIS Tested N-Channel 30 0.020 at VGS = 8 V 8e 6.2 Compliant to RoHS Directive 2002/95/EC 0.024 at VGS = 4.5 V 8e 0.032 at VGS... See More ⇒
Detailed specifications: FDS4435-NL, FDS4450, FDS4465-NL-9, FDS4685-NL, FDS4897A, FDS4935BZ-NL-38, FDS4936, FDS6675B, IRFB7545, FDS8435A, FDS8984-NL, FDS9435, FDS9435A-NL, FDS9945-NL, FDT1600N10A, FDW2601NZ, FL014N
Keywords - FDS8333C MOSFET specs
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