FNK10N25B Specs and Replacement
Type Designator: FNK10N25B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 330 nS
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 typ Ohm
Package: TSSOP8
FNK10N25B substitution
- MOSFET ⓘ Cross-Reference Search
FNK10N25B datasheet
fnk10n25b.pdf
FNK10N25B www.VBsemi.tw Dual N-Channel 3 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free Option Available VDS (V) RDS(on) ( )ID (A) Pb-free TrenchFET Power MOSFETs 0.012 at VGS = 10 V Available 8.6 30 RoHS* 0.019 at VGS = 4.5 V 7.5 COMPLIANT D D TSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G2 1 3 6 2 G 1 4 G 2 5 S1 S2 Top View ABSOLUTE MAXIMUM RAT... See More ⇒
Detailed specifications: FDS8435A, FDS8984-NL, FDS9435, FDS9435A-NL, FDS9945-NL, FDT1600N10A, FDW2601NZ, FL014N, IRFP064N, FQD13N10LTF, FQD20N06LE, FQU13N06, FQU13N10, FR120N, FR2307Z, FR5305, FR5505
Keywords - FNK10N25B MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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