All MOSFET. FNK10N25B Datasheet

 

FNK10N25B Datasheet and Replacement


   Type Designator: FNK10N25B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 7.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 330 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012(typ) Ohm
   Package: TSSOP8
 

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FNK10N25B Datasheet (PDF)

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FNK10N25B

FNK10N25Bwww.VBsemi.twDual N-Channel 3 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free Option AvailableVDS (V) RDS(on) ()ID (A)Pb-free TrenchFET Power MOSFETs0.012 at VGS = 10 V Available8.630RoHS*0.019 at VGS = 4.5 V 7.5COMPLIANTDDTSSOP-8 D D 1 8 S S 1 2 7 2 S S G1 G21 3 6 2 G 1 4 G 2 5 S1 S2Top View ABSOLUTE MAXIMUM RAT

Datasheet: FDS8435A , FDS8984-NL , FDS9435 , FDS9435A-NL , FDS9945-NL , FDT1600N10A , FDW2601NZ , FL014N , 5N50 , FQD13N10LTF , FQD20N06LE , FQU13N06 , FQU13N10 , FR120N , FR2307Z , FR5305 , FR5505 .

History: FDMS86255ET150 | NCE30P30L

Keywords - FNK10N25B MOSFET datasheet

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