All MOSFET. FW232A-TL-E Datasheet

 

FW232A-TL-E Datasheet and Replacement


   Type Designator: FW232A-TL-E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.78 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 117 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022(typ) Ohm
   Package: SO8
 

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FW232A-TL-E Datasheet (PDF)

 ..1. Size:1958K  cn vbsemi
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FW232A-TL-E

FW232A-TL-Ewww.VBsemi.twDual N-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A) Qg (Typ.)Definition0.022 at VGS = 10 V TrenchFET Power MOSFET6.830 15 nC 100 % UIS Tested0.026 at VGS = 4.5 V 6.0 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Set Top Box

 9.1. Size:30K  sanyo
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FW232A-TL-E

Ordering number : ENN6618FW232N-Channel Silicon MOSFETFW232Load Switching ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm 2.5V drive. 2129[FW232]851 : Source12 : Gate1140.2 3 : Source25.04 : Gate25 : Drain26 : Drain27 : Drain10.595 1.27 8 : Drain10.43SpecificationsSANYO : SOP8Absolute Maximum Ratings at Ta=25CParameter

Datasheet: FR5505 , FR9N20D , FSS210 , FTD2017 , FTD2017A , FTU36N06N , FU120N , FU9024N , IRF640N , FW342-TL , G2306A , G2309 , GE3401 , GF4435 , GT4953 , GTT8205S , H7N0308CF .

History: LPM9029C

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