All MOSFET. G2309 Datasheet

 

G2309 Datasheet and Replacement


   Type Designator: G2309
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055(typ) Ohm
   Package: SOT23
 

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G2309 Datasheet (PDF)

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G2309

G2309www.VBsemi.twP-Channel 30 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg TestedVDS (V) RDS(on) () Typ.ID (A)a Qg (Typ.)0.046 at VGS = - 10 V - 5.60.049 at VGS = - 6 V - 5 11.4 nC- 30APPLICATIONS0.054 at VGS = - 4.5 V -4.5 For Mobile Computing- Load Switch- Notebook Adaptor SwitchSTO-236- DC/DC Converter(SOT-23)

Datasheet: FTD2017 , FTD2017A , FTU36N06N , FU120N , FU9024N , FW232A-TL-E , FW342-TL , G2306A , IRF3710 , GE3401 , GF4435 , GT4953 , GTT8205S , H7N0308CF , HAF2007-90S , HAT1020RJ , HAT1024RJ .

History: WMB35P04T1 | STP9NK65ZFP | MTE130N20KE3 | IXTP96P085T | OSG60R180FF | SMG2328S | UTT40N03

Keywords - G2309 MOSFET datasheet

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