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GF4435 Specs and Replacement

Type Designator: GF4435

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 13 nS

Cossⓘ - Output Capacitance: 180 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 typ Ohm

Package: SO8

GF4435 substitution

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GF4435 datasheet

 ..1. Size:1935K  cn vbsemi
 gf4435.pdf pdf_icon

GF4435

GF4435 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.018 at VGS = - 10 V - 9.0 TrenchFET Power MOSFET - 30 13 nC 100 % Rg Tested 0.024 at VGS = - 4.5 V - 7.8 APPLICATIONS Load Switch Battery Switch S SO-8 S 1 8 D G S D 2 7 S 3 6 D G ... See More ⇒

Detailed specifications: FTU36N06N, FU120N, FU9024N, FW232A-TL-E, FW342-TL, G2306A, G2309, GE3401, IRF3710, GT4953, GTT8205S, H7N0308CF, HAF2007-90S, HAT1020RJ, HAT1024RJ, HAT1048RJ, HAT2016RJ

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